Polaron Properties in Ternary Group-III Nitride Mixed Crystals

2006 ◽  
Author(s):  
Z. W. Yan ◽  
S. L. Ban ◽  
X. X. Liang
Keyword(s):  
Mixed Crystals ◽  
Group Iii ◽  
Group Iii Nitride

Polaron properties in ternary group-III nitride mixed crystals

2005 ◽  
Vol 43 (3) ◽  
pp. 339-345 ◽  
Author(s):  
Z. W. Yan ◽  
S. L. Ban ◽  
X. X. Liang
Keyword(s):  
Mixed Crystals ◽  
Group Iii ◽  
Group Iii Nitride

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Devices ◽  
Capping Layer ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

2004 ◽  
Vol 1 (8) ◽  
pp. 2210-2227 ◽  
Author(s):  
M. Hermann ◽  
E. Monroy ◽  
A. Helman ◽  
B. Baur ◽  
M. Albrecht ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Vertical Transport ◽  
Resonant Tunneling Diodes ◽  
Group Iii ◽  
Tunneling Diodes ◽  
Group Iii Nitride

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride

Exciton localization in group-III nitride quantum wells

1999 ◽  
Vol 59 (15) ◽  
pp. 9783-9786 ◽  
Author(s):  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Exciton Localization ◽  
Group Iii Nitride
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