LnPdSb (Ln=La,Gd): Promising intermetallics with large carrier mobility for high performance p-type thermoelectric materials

2006 ◽  
Vol 89 (9) ◽  
pp. 092108 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Carrier Mobility ◽  
P Type

Structure Design for High Performance n-Type Polymer Thermoelectric Materials

2021 ◽  
Author(s):  
Qi Zhang ◽  
Hengda Sun ◽  
Meifang Zhu
Keyword(s):  
Conjugated Polymers ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Waste Heat ◽  
Building Blocks ◽  
Structure Design ◽  
Potential Candidate ◽  
Polymer Backbone ◽  
P Type ◽  
Polymer Thermoelectric

Abstract Organic thermoelectric (OTE) materials have been regarded as a potential candidate to harvest waste heat from complex, low temperature surfaces of objects and convert it into electricity. Recently, n-type conjugated polymers as organic thermoelectric materials have aroused intensive research in order to improve their performance to match up with their p-type counterpart. In this review, we discuss aspects that affect the performance of n-type OTEs, and further focus on the effect of planarity of backbone on doping efficiency and eventually the TE performance. We then summarize strategies such as implementing rigid n-type polymer backbone or modifying conventional polymer building blocks for more planar conformation. In the outlook part, we conclude forementioned devotions and point out new possibility that may promote the future development of this field.

High thermoelectric performance in low-cost SnS0.91Se0.09 crystals

Science ◽  
2019 ◽  
Vol 365 (6460) ◽  
pp. 1418-1424 ◽  
Author(s):  
Wenke He ◽  
Dongyang Wang ◽  
Haijun Wu ◽  
Yu Xiao ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Toxic Elements ◽  
Low Cost ◽  
Thermoelectric Performance ◽  
Tin Sulfide ◽  
Temperature Dependent ◽  
Earth Abundant

Thermoelectric technology allows conversion between heat and electricity. Many good thermoelectric materials contain rare or toxic elements, so developing low-cost and high-performance thermoelectric materials is warranted. Here, we report the temperature-dependent interplay of three separate electronic bands in hole-doped tin sulfide (SnS) crystals. This behavior leads to synergistic optimization between effective mass (m*) and carrier mobility (μ) and can be boosted through introducing selenium (Se). This enhanced the power factor from ~30 to ~53 microwatts per centimeter per square kelvin (μW cm−1 K−2 at 300 K), while lowering the thermal conductivity after Se alloying. As a result, we obtained a maximum figure of merit ZT (ZTmax) of ~1.6 at 873 K and an average ZT (ZTave) of ~1.25 at 300 to 873 K in SnS0.91Se0.09 crystals. Our strategy for band manipulation offers a different route for optimizing thermoelectric performance. The high-performance SnS crystals represent an important step toward low-cost, Earth-abundant, and environmentally friendly thermoelectrics.

High-performance p-type elemental Te thermoelectric materials enabled by the synergy of carrier tuning and phonon engineering

2020 ◽  
Vol 8 (24) ◽  
pp. 12156-12168
Author(s):  
Decheng An ◽  
Shaoping Chen ◽  
Xin Zhai ◽  
Yuan Yu ◽  
Wenhao Fan ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Figure Of Merit ◽  
Phonon Transport ◽  
P Type

An outstanding figure-of-merit zT ≈ 1.06 at 600 K for p-type elemental Te thermoelectrics is realized by synergistically tuning their carrier and phonon transport behaviors via a multicomponent alloying strategy.

Achieving high-performance p-type SmMg2Bi2 thermoelectric materials through band engineering and alloying effects

2020 ◽  
Vol 8 (31) ◽  
pp. 15760-15766 ◽  
Author(s):  
Udara Saparamadu ◽  
Xiaojian Tan ◽  
Jifeng Sun ◽  
Zhensong Ren ◽  
Shaowei Song ◽  
...  
Keyword(s):  
Power Generation ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Promising Material ◽  
Band Engineering ◽  
P Type ◽  
Alloying Effects

P-type SmMg2Bi2, a new member of Bi-based 1-2-2 Zintl family, has been investigated and demonstrated to be a promising material for application in TE power generation.

Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1

2015 ◽  
Vol 8 (1) ◽  
pp. 216-220 ◽  
Author(s):  
Chenguang Fu ◽  
Tiejun Zhu ◽  
Yintu Liu ◽  
Hanhui Xie ◽  
Xinbing Zhao
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Figure Of Merit ◽  
Heusler Compounds ◽  
Band Engineering ◽  
Engineering Approach ◽  
P Type

High performance p-type half-Heusler compounds FeNb1−xTixSb are developed via a band engineering approach and a record zT of 1.1 is achieved.

scholarly journals High hole mobility in physical vapour deposition-grown tellurium-based transistors

2021 ◽  
Vol 8 (8) ◽  
pp. 210554
Author(s):  
Lin Tao ◽  
Lixiang Han ◽  
Qian Yue ◽  
Bin Yao ◽  
Yujue Yang ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Vapour Deposition ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Hole Mobility ◽  
Physical Vapour Deposition ◽  
Metal Dichalcogenides ◽  
P Type

Carrier mobility is one of most important figures of merit for materials that can determine to a large extent the corresponding device performances. So far, extensive efforts have been devoted to the mobility improvement of two-dimensional (2D) materials regarded as promising candidates to complement the conventional semiconductors. Graphene has amazing mobility but suffers from zero bandgap. Subsequently, 2D transition-metal dichalcogenides benefit from their sizable bandgap while the mobility is limited. Recently, the 2D elemental materials such as the representative black phosphorus can combine the high mobility with moderate bandgap; however the air-stability is a challenge. Here, we report air-stable tellurium flakes and wires using the facile and scalable physical vapour deposition (PVD) method. The prototype field-effect transistors were fabricated to exhibit high hole mobility up to 1485 cm 2 V −1 s −1 at room temperature and 3500 cm 2 V −1 s −1 at low temperature (2 K). This work can attract numerous attentions on this new emerging 2D tellurium and open up a new way for exploring high-performance optoelectronics based on the PVD-grown p-type tellurium.

scholarly journals Titelbild: Selenium‐Substituted Diketopyrrolopyrrole Polymer for High‐Performance p‐Type Organic Thermoelectric Materials (Angew. Chem. 52/2019)

2019 ◽  
Vol 131 (52) ◽  
pp. 18893-18893
Author(s):  
Jiamin Ding ◽  
Zitong Liu ◽  
Wenrui Zhao ◽  
Wenlong Jin ◽  
Lanyi Xiang ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Organic Thermoelectric Materials ◽  
P Type
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