Accurate dependence of gallium nitride thermal conductivity on dislocation density

2006 ◽  
Vol 89 (9) ◽  
pp. 092123 ◽  
Author(s):  
C. Mion ◽  
J. F. Muth ◽  
E. A. Preble ◽  
D. Hanser
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
Dislocation Density

Single-Crystal Aluminum Nitride Substrate Preparation from Bulk Crystals

2001 ◽  
Vol 680 ◽  
Author(s):  
J. Carlos Rojo ◽  
Leo J. Schowalter ◽  
Kenneth Morgan ◽  
Doru I. Florescu ◽  
Fred H. Pollak ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Analysis ◽  
Dislocation Density ◽  
Single Crystal ◽  
High Strain ◽  
Bulk Crystals ◽  
Scanning Thermal Microscopy ◽  
Substrate Preparation ◽  
X Ray ◽  
Differential Expansion

ABSTRACTLarge (15mm diameter) single-crystal AlN boules have been prepared using sublimationrecondensation growth. X-ray topography shows that the dislocation density averages less than 103 cm2 in some of the substrates but also that the dislocations are not uniformly distributed. Also, strain due to the differential expansion with the crucible walls seems to cause severe cracking in the periphery of the crystal and high-strain regions. Thermal analysis using the Scanning Thermal Microscopy (SThM) reveals a thermal conductivity of 3.4 ± 0.2 W/K-cm, which is the largest value ever reported for AlN.

scholarly journals High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

2007 ◽  
Vol 48 (10) ◽  
pp. 2782-2786 ◽  
Author(s):  
Hiroyuki Shibata ◽  
Yoshio Waseda ◽  
Hiromichi Ohta ◽  
Kazumasa Kiyomi ◽  
Kenji Shimoyama ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
High Thermal Conductivity

scholarly journals Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Xufei Wu ◽  
Jonghoon Lee ◽  
Vikas Varshney ◽  
Jennifer L. Wohlwend ◽  
Ajit K. Roy ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Zinc Oxide ◽  
Gallium Nitride ◽  
Comparative Study ◽  
First Principles ◽  
Lattice Dynamics

scholarly journals Gallium nitride films grown on AlN/sapphire templates

2020 ◽  
Author(s):  
Jin Wu
Keyword(s):  
Gallium Nitride ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
High Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Low Dislocation Density

High-quality GaN films were grown on AlN/c-sapphire templates by MOVPE with Hall mobility of 802 cm2/V.s and carrier concentration of 8.1x1016/cm3 at 300K have achieved. The film low dislocation density of 5x107 cm-2 and X-ray rocking curve FWHM of 101 and 250 arcsec for the (0004) and (20-24) reflections were also obtained, respectively.

High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films

2021 ◽  
Vol 5 (10) ◽  
Author(s):  
Yee Rui Koh ◽  
Md Shafkat Bin Hoque ◽  
Habib Ahmad ◽  
David H. Olson ◽  
Zeyu Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Gallium Nitride ◽  
High Thermal Conductivity ◽  
Thermal Boundary Conductance

Thermal conductivity, dislocation density and GaN device design

2006 ◽  
Vol 40 (4-6) ◽  
pp. 338-342 ◽  
Author(s):  
C. Mion ◽  
J.F. Muth ◽  
Edward A. Preble ◽  
Drew Hanser
Keyword(s):  
Thermal Conductivity ◽  
Dislocation Density ◽  
Device Design
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