Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers
2004 ◽
Vol 4
(4-1)
◽
pp. 121-129
◽
Keyword(s):
2010 ◽
Vol 168-169
◽
pp. 321-324
Keyword(s):
2014 ◽
Vol 24
(4)
◽
pp. 1-7
◽