scholarly journals Structural and optical properties of Zn1−xMgxO nanocrystals obtained by low temperature method

2006 ◽  
Vol 100 (3) ◽  
pp. 034315 ◽  
Author(s):  
Manoranjan Ghosh ◽  
A. K. Raychaudhuri
2011 ◽  
Author(s):  
Aparna Thankappan ◽  
Misha Hari ◽  
S. Mathew ◽  
Santhi Ani Joseph ◽  
V. P. N. Nampoori ◽  
...  

2017 ◽  
Vol 91 ◽  
pp. 227-231 ◽  
Author(s):  
Abhisek Chakraborty ◽  
Antonio Agresti ◽  
Roberto Pizzoferrato ◽  
Fabio De Matteis ◽  
Andrea Orsini ◽  
...  

Author(s):  
T. S. Cheng ◽  
C. T. Foxon ◽  
N. J Jeffs ◽  
O. H. Hughes ◽  
B. G. Ren ◽  
...  

Films of GaN have been grown using a modified MBE method in which the active nitrogen is supplied from an RF activated plasma source. Wurtzite films grown on (0 0 1) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure; the (0 0 0 1) planes of the layers being parallel to the (0 0 1) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (1 1 1)A and (1 1 1)B oriented GaAs substrates. The improved structural properties of such films, assessed using x-ray and TEM methods, correlate with better low temperature PL performance.


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