Gate-metal formation-related kink effect and gate current on In0.5Al0.5As∕In0.5Ga0.5As metamorphic high electron mobility transistor performance

M. K. Hsu; H. R. Chen; S. Y. Chiou; W. T. Chen; G. H. Chen; Y. C. Chang; W. S. Lour

doi:10.1063/1.2222259

Gate-metal formation-related kink effect and gate current on In0.5Al0.5As∕In0.5Ga0.5As metamorphic high electron mobility transistor performance

Applied Physics Letters ◽

10.1063/1.2222259 ◽

2006 ◽

Vol 89 (3) ◽

pp. 033509 ◽

Cited By ~ 13

Author(s):

M. K. Hsu ◽

H. R. Chen ◽

S. Y. Chiou ◽

W. T. Chen ◽

G. H. Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Kink Effect

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A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor

Acta Physica Sinica ◽

10.7498/aps.61.047301 ◽

2012 ◽

Vol 61 (4) ◽

pp. 047301

Author(s):

Ma Ji-Gang ◽

Ma Xiao-Hua ◽

Zhang Hui-Long ◽

Cao Meng-Yi ◽

Zhang Kai ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Semiempirical Model ◽

High Electron ◽

High Electron Mobility ◽

Kink Effect

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Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor

Journal of Applied Physics ◽

10.1063/5.0066036 ◽

2021 ◽

Vol 130 (20) ◽

pp. 205707

Author(s):

Ramdas P. Khade ◽

Sujan Sarkar ◽

Amitava DasGupta ◽

Nandita DasGupta

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Kink Effect

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Analysis of On-State Gate Current of AlGaN/GaN High-Electron-Mobility Transistor under Electrical and Thermal Stresses

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.124101 ◽

2013 ◽

Vol 52 (12R) ◽

pp. 124101 ◽

Cited By ~ 3

Author(s):

Kazuo Hayashi ◽

Hajime Sasaki ◽

Toshiyuki Oishi

Keyword(s):

Electron Mobility ◽

Thermal Stresses ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gate Current

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Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

Chinese Physics B ◽

10.1088/1674-1056/23/2/027302 ◽

2014 ◽

Vol 23 (2) ◽

pp. 027302 ◽

Cited By ~ 5

Author(s):

Xiao-Hua Ma ◽

Min Lü ◽

Lei Pang ◽

Yuan-Qi Jiang ◽

Jing-Zhi Yang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Kink Effect ◽

Current Voltage ◽

Current Voltage Characteristics

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Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Applied Physics Letters ◽

10.1063/1.3573794 ◽

2011 ◽

Vol 98 (16) ◽

pp. 163501 ◽

Cited By ~ 39

Author(s):

Z. H. Liu ◽

G. I. Ng ◽

S. Arulkumaran ◽

Y. K. T. Maung ◽

H. Zhou

Keyword(s):

Electron Mobility ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Current Transport ◽

Temperature Dependent ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Gate Current

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High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Optical and Quantum Electronics ◽

10.1007/s11082-021-02786-2 ◽

2021 ◽

Vol 53 (3) ◽

Author(s):

Yi Huang ◽

Jinpeng Li ◽

Weizhong Chen ◽

Jin Wang ◽

Junjun Xue ◽

...

Keyword(s):

Barrier Layer ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

physica status solidi (a) ◽

10.1002/pssa.201900694 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900694

Author(s):

Uiho Choi ◽

Donghyeop Jung ◽

Kyeongjae Lee ◽

Taemyung Kwak ◽

Taehoon Jang ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Double Heterostructure ◽

Aln Buffer

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Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/31/2/001 ◽

1998 ◽

Vol 31 (2) ◽

pp. 159-164 ◽

Cited By ~ 6

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Krishnamachar Prasad ◽

Geok-Ing Ng ◽

Per Lindström

Keyword(s):

Electron Mobility ◽

Carrier Density ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Photoluminescence Spectra ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Nondestructive Determination

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Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l932 ◽

2006 ◽

Vol 45 (No. 35) ◽

pp. L932-L934 ◽

Cited By ~ 1

Author(s):

Li-Hsin Chu ◽

Heng-Tung Hsu ◽

Edward-Yi Chang ◽

Tser-Lung Lee ◽

Sze-Hung Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3701164 ◽

2012 ◽

Vol 100 (14) ◽

pp. 143507 ◽

Cited By ~ 11

Author(s):

P. Marko ◽

A. Alexewicz ◽

O. Hilt ◽

G. Meneghesso ◽

E. Zanoni ◽

...

Keyword(s):

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Random Telegraph Signal ◽

Signal Noise ◽

Electron Mobility Transistors

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