scholarly journals Long-wavelength vertical-cavity surface-emitting laser using an electro-optic index modulator with 10nm tuning range

2006 ◽  
Vol 89 (1) ◽  
pp. 011102 ◽  
Author(s):  
C. Levallois ◽  
B. Caillaud ◽  
J.-L. de Bougrenet de la Tocnaye ◽  
L. Dupont ◽  
A. Le Corre ◽  
...  
2000 ◽  
Vol 36 (13) ◽  
pp. 1124 ◽  
Author(s):  
M. Ortsiefer ◽  
R. Shau ◽  
M. Zigldrum ◽  
G. Böhm ◽  
F. Köhler ◽  
...  

1998 ◽  
Vol 72 (2) ◽  
pp. 135-137 ◽  
Author(s):  
H. Gebretsadik ◽  
K. Kamath ◽  
W.-D. Zhou ◽  
P. Bhattacharya ◽  
C. Caneau ◽  
...  

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 3997-4001 ◽  
Author(s):  
Shigeaki Sekiguchi ◽  
Tomoyuki Miyamoto ◽  
Tadayoshi Kimura ◽  
Gen Okazaki ◽  
Fumio Koyama ◽  
...  

1999 ◽  
Vol 35 (11) ◽  
pp. 900 ◽  
Author(s):  
D. Vakhshoori ◽  
P. Tayebati ◽  
Chih-Cheng Lu ◽  
M. Azimi ◽  
P. Wang ◽  
...  

2009 ◽  
Vol 15 (3) ◽  
pp. 838-843 ◽  
Author(s):  
Yutaka Onishi ◽  
Nobuhiro Saga ◽  
Kenji Koyama ◽  
Hideyuki Doi ◽  
Takashi Ishizuka ◽  
...  

1996 ◽  
Vol 421 ◽  
Author(s):  
D.I. Babic ◽  
V. Jayaraman ◽  
N. M. Margalit ◽  
K. Streubel ◽  
M.E. Heimbuch ◽  
...  

AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.


1998 ◽  
Vol 10 (2) ◽  
pp. 188-190 ◽  
Author(s):  
M.C. Larson ◽  
M. Kondow ◽  
T. Kitatani ◽  
K. Nakahara ◽  
K. Tamura ◽  
...  

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