Hydrogen plasma dry etching method for field emission application

2006 ◽  
Vol 88 (26) ◽  
pp. 263118 ◽  
Author(s):  
T. C. Cheng ◽  
J. Shieh ◽  
W. J. Huang ◽  
M. C. Yang ◽  
M. H. Cheng ◽  
...  
Keyword(s):  
Field Emission ◽  
Hydrogen Plasma ◽  
Dry Etching ◽  
Etching Method

Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties

2003 ◽  
Vol 18 (2) ◽  
pp. 305-326 ◽  
Author(s):  
Koji Kobashi ◽  
Takeshi Tachibana ◽  
Yoshihiro Yokota ◽  
Nobuyuki Kawakami ◽  
Kazushi Hayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Direct Current ◽  
Electron Emission ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Polycrystalline Diamond ◽  
Metal Catalyst ◽  
Direct Current Bias ◽  
Conical Structures

Polycrystalline diamond films, single crystal bulk diamonds, and diamond powder were treated in microwave plasma of hydrogen at 1.6 torr under a negative direct-current bias of −150 to −300 V without metal catalyst. It was found that fibrous structures, uniformly elongated along the direction normal to the specimen surface, were formed on the diamond surfaces. Similar experiments for glasslike carbon resulted in conical structures with frizzy fibers at the tops. Transmission electron microscopy measurements indicated that the fibers formed on diamond consisted of randomly oriented diamond nanocrystals with diameters of less than 10 nm, while the conical structures formed on glasslike carbon consisted of graphite nanocrystals. Field emission measurements of the fibrous specimens exhibited better emission efficiency than untreated ones. The field emission electron microscopy of the fibrous glasslike carbon showed a presence of discrete electron emission sites at a density of approximately 10,000 sites/cm2.

The Fabrication of Silicon Nanopin with CsCl Nanoislands and Dry Etching for Field Emission

2013 ◽  
Vol 562-565 ◽  
pp. 1224-1228
Author(s):  
Marina Ashmkhan ◽  
Jing Liu ◽  
Bo Wang ◽  
Fu Ting Yi
Keyword(s):  
Field Emission ◽  
Thermal Evaporation ◽  
Dry Etching ◽  
Fabrication Process ◽  
Controlled Environment ◽  
Gate Electrodes ◽  
Icp Etching ◽  
Lift Off ◽  
Photolithography Process ◽  
Ag Film

Silicon nano pin arrays with heights of 1.3-3.66um and diameter of 315-899nm, are fabricated by CsCl self-assemble for CsCl nano islands for mask and ICP etching for silicon pins. CsCl film is firstly deposited on the wafer by thermal evaporation and putted in the humid controlled environment to be developed to the CsCl islands with diameter of 341-915 nm as self-assembled technology. Then the ICP etching with SF6, CCl4, He gas is introduced to make the silicon nano pin by the mask of CsCl nano islands, and the silicon nano pins with the different height of 1.3-3.66 um are finished for field emission. The gated FEA templates are fabricated by photolithography process and the lift-off technology with Ti-Si film as the gate electrodes. The final template for field emission has the silicon nano pins with diameters of 31.7 nm on top, Ti-Ag film with thickness of 105nm and gate holes of 30um in diameter, and SU8 resist insulator structure with thickness of 4um and holes of 10um in diameter. The optimization of the fabrication process and the performance for the configuration will be made.

A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

2002 ◽  
Vol 722 ◽  
Author(s):  
Maria Losurdo ◽  
MariaMichela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Gon Namkoong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Dry Etching ◽  
Surface Reactivity ◽  
Wet Etching ◽  
Hydrogen Treatment

AbstractThe use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.

Plasma Chemistries for Dry Etching GaN, AIN, InGaN and InAIN

1996 ◽  
Vol 421 ◽  
Author(s):  
S. J. Pearton ◽  
C. B. Vartuli ◽  
J. W. Lee ◽  
S. M. Donovan ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Critical Factor ◽  
Dry Etching ◽  
Ion Energies ◽  
Volatile Products ◽  
Etch Rates

AbstractEtch rates up to 7,000Å/min. for GaN are obtained in Cl2/H2/Ar or BCl3/Ar ECR discharges at 1–3mTorr and moderate dc biases. Typical rates with HI/H2 are about a factor of three lower under the same conditions, while CH4/H2 produces maximum rates of only ˜2000Å/min. The role of additives such as SF6, N2, H2 or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical ( in forming volatile products with N) or physical ( in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V's in that bondbreaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are ≥75eV.

Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment

2021 ◽  
Vol 9 (1) ◽  
pp. 015014
Author(s):  
Zhi-Wei Song ◽  
Changhao Wang ◽  
Gen-Cai Guo ◽  
Meng-Qi Yang ◽  
Qi Liang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Emission ◽  
Hydrogen Plasma ◽  
Si Substrates

A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching

2002 ◽  
Vol 41 (Part 1, No. 5A) ◽  
pp. 3076-3080 ◽  
Author(s):  
Masakazu Kanechika ◽  
Noriaki Sugimoto ◽  
Yasuichi Mitsushima
Keyword(s):  
Field Emission ◽  
Dry Etching

Effects of Hydrogen Post Treatment and Duty Factor on Carbon Nanotube Field Emission Stability

2006 ◽  
Vol 963 ◽  
Author(s):  
Sigen Wang ◽  
Sha Chang
Keyword(s):  
Field Emission ◽  
Hydrogen Plasma ◽  
Post Treatment ◽  
Emission Current ◽  
Duty Factor ◽  
Electron Sources ◽  
Emission Stability ◽  
High Emission ◽  
Microwave Power Amplifier ◽  
Stable Field

ABSTRACTCarbon nanotubes (CNTs) have been investigated as field emission electron sources for a number of applications such as x-ray source and microwave power amplifier. These applications often require that nanotubes provide a stable field emission at a high emission current. In this paper, we investigated the emission stability of CNTs as functions of hydrogen post-treatment and duty factor. The experimental results show that the hydrogen plasma treatment and a reduced duty cycle from 100% to 35% can noticeably improve the emission stability of CNTs at a high current value of 4 mA. Our study also shows that emission induced anode heating at high duty factor and high emission current level degrades vacuum level and thus the emission stability of CNTs.

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