Hexagonal diamond synthesis on h-GaN strained films

2006 ◽  
Vol 89 (7) ◽  
pp. 071911 ◽  
Author(s):  
Abha Misra ◽  
Pawan K. Tyagi ◽  
Brajesh S. Yadav ◽  
P. Rai ◽  
D. S. Misra ◽  
...  
2001 ◽  
Vol 27 (6) ◽  
pp. 360-360
Author(s):  
William Butler
Keyword(s):  

2017 ◽  
Vol 1 (5) ◽  
Author(s):  
Kailang Liu ◽  
Isabelle Berbezier ◽  
Thomas David ◽  
Luc Favre ◽  
Antoine Ronda ◽  
...  
Keyword(s):  

CrystEngComm ◽  
2020 ◽  
Vol 22 (44) ◽  
pp. 7601-7606
Author(s):  
Chunxiao Wang ◽  
Hong-an Ma ◽  
Liangchao Chen ◽  
Xinyuan Miao ◽  
Liang Zhao ◽  
...  

Here, a new type of supercharged cell assembly is proposed that can effectively reduce the oil pressure during high-pressure, high-temperature (HPHT) diamond synthesis.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Vishal Bhardwaj ◽  
Anupam Bhattacharya ◽  
Shivangi Srivastava ◽  
Vladimir V. Khovaylo ◽  
Jhuma Sannigrahi ◽  
...  

AbstractHalf-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.


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