Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors

2006 ◽  
Vol 88 (24) ◽  
pp. 242503 ◽  
Author(s):  
S. Ramachandran ◽  
J. Narayan ◽  
J. T. Prater
2012 ◽  
Vol 535-537 ◽  
pp. 1252-1257 ◽  
Author(s):  
Yu Zhang ◽  
Tong Li ◽  
Ya Xin Wang ◽  
Xin Wei Zhao

The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as DMSs, has attracted much interest. Among DMSs, the system of Mn-doped ZnO is considered as the most promising candidates. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Mn DMSs.


2008 ◽  
Vol 57 (7) ◽  
pp. 4539
Author(s):  
Yu Zhou ◽  
Li Xiang ◽  
Long Xue ◽  
Cheng Xing-Wang ◽  
Wang Jing-Yun ◽  
...  

2008 ◽  
Vol 17 (4) ◽  
pp. 1371-1376 ◽  
Author(s):  
Liu Xue-Chao ◽  
Zhang Hua-Wei ◽  
Zhang Tao ◽  
Chen Bo-Yuan ◽  
Chen Zhi-Zhan ◽  
...  

2008 ◽  
Vol 18 (43) ◽  
pp. 5208 ◽  
Author(s):  
Igor Djerdj ◽  
Georg Garnweitner ◽  
Denis Arčon ◽  
Matej Pregelj ◽  
Zvonko Jagličić ◽  
...  

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