Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition

2006 ◽  
Vol 99 (12) ◽  
pp. 123513 ◽  
Author(s):  
Atsushi Kobayashi ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka
2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  

1993 ◽  
Vol 62 (4) ◽  
pp. 414-416 ◽  
Author(s):  
D. P. Norton ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. Feenstra

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey

1994 ◽  
Vol 65 (16) ◽  
pp. 1995-1997 ◽  
Author(s):  
J. M. Liu ◽  
F. Zhang ◽  
Z. G. Liu ◽  
S. N. Zhu ◽  
L. J. Shi ◽  
...  

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.


2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  

2010 ◽  
Vol 519 (5) ◽  
pp. 1540-1545 ◽  
Author(s):  
Ta-Kun Chen ◽  
Jiu-Yong Luo ◽  
Chung-Ting Ke ◽  
Hsian-Hong Chang ◽  
Tzu-Wen Huang ◽  
...  

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