scholarly journals In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry

2006 ◽  
Vol 99 (12) ◽  
pp. 124909 ◽  
Author(s):  
Jay S. Brown ◽  
Gregor Koblmüller ◽  
Robert Averbeck ◽  
Henning Riechert ◽  
James S. Speck
Keyword(s):  
Mass Spectrometry ◽  
Electron Diffraction ◽  
Quantum Dot ◽  
High Energy ◽  
Energy Electron ◽  
Line Of Sight ◽  
High Energy Electron ◽  
In Situ Characterization

Characterization of Ultrathin Fe–Co Layer Grown on Amorphous Co–Fe–B by In situ Reflective High-Energy Electron Diffraction

2013 ◽  
Vol 6 (6) ◽  
pp. 063003 ◽  
Author(s):  
Hiroyuki Hosoya ◽  
Yoshinori Nagamine ◽  
Koji Tsunekawa ◽  
Vadym Zayets ◽  
Shinji Yuasa
Keyword(s):  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction

2007 ◽  
Vol 101 (5) ◽  
pp. 056106 ◽  
Author(s):  
J. Coraux ◽  
V. Favre-Nicolin ◽  
H. Renevier ◽  
M. G. Proietti ◽  
B. Amstatt ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Quantum Dot ◽  
Structural Characterization ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

CBE Growth Characterization of GaAs and InGaAs by Rheed and RD

1992 ◽  
Vol 282 ◽  
Author(s):  
G. Paulsson ◽  
B. Junno ◽  
L. Samuelson
Keyword(s):  
Electron Diffraction ◽  
Growth Dynamics ◽  
High Energy ◽  
Oscillatory Behavior ◽  
Energy Electron ◽  
High Energy Electron ◽  
Growth Characterization ◽  
Similar Growth

ABSTRACTTriethylgallium, trimethylindium and tertiarybutylarsine have been used to grow GaAs and InGaAs on (OO1)GaAs. No pre-cracking was used so that the thermal decomposition of tertiarybutylarsine on GaAs could be studied. The growth has been monitored in-situ using reflection high-energy electron diffraction and reflectance-difference. A comparison ismade between the reflectance difference signal and the intensity of the reflection high-energy electron diffraction specular spot as the surface is transformed from As rich to Garich. Using the former technique similar growth transients have also been studied as a function of the temperature. It is found that the incorporation of small amounts of In (less than 5 per cent) in the buffer layer significantly improves the oscillatory behavior of the RD-signal when growth of GaAs is commenced. Finally, the growth dynamics of InGaAs isstudied using reflection high-energy electron diffraction.

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