Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes

2006 ◽  
Vol 88 (20) ◽  
pp. 202105 ◽  
Author(s):  
Min-Chang Jeong ◽  
Byeong-Yun Oh ◽  
Moon-Ho Ham ◽  
Jae-Min Myoung
Keyword(s):  
Light Emitting Diodes ◽  
Nanowire Array ◽  
Zno Nanowires ◽  
Zno Nanowire ◽  
Zno Film ◽  
Light Emitting ◽  
Gan Film

High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes

2019 ◽  
Vol 239 ◽  
pp. 45-47 ◽  
Author(s):  
Haixia Li ◽  
Wanqiu Zhao ◽  
Yang Liu ◽  
Yi Liang ◽  
Liang Ma ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Nanowire Array ◽  
Zno Nanowire ◽  
Light Emitting ◽  
High Level ◽  
P Type ◽  
White Light Emitting Diodes ◽  
Gan Film

Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes

2010 ◽  
Vol 22 (30) ◽  
pp. 3298-3302 ◽  
Author(s):  
Oleg Lupan ◽  
Thierry Pauporté ◽  
Bruno Viana
Keyword(s):  
Light Emitting Diodes ◽  
Low Voltage ◽  
Nanowire Array ◽  
Zno Nanowire ◽  
Light Emitting

Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias

2018 ◽  
Vol 6 (42) ◽  
pp. 11368-11373 ◽  
Author(s):  
Qiu Ai ◽  
Kewei Liu ◽  
Hongyu Ma ◽  
Jialin Yang ◽  
Xing Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Zno Film ◽  
Light Emitting ◽  
Gan Film

ZnO film was fabricated on p-GaN film using the molecular beam epitaxy technique to form heterojunction light emitting diodes (LEDs).

Sulfuration–desulfuration reaction sensing effect of intrinsic ZnO nanowires for high-performance H2S detection

2015 ◽  
Vol 3 (12) ◽  
pp. 6330-6339 ◽  
Author(s):  
Haiyun Huang ◽  
Pengcheng Xu ◽  
Dan Zheng ◽  
Chuanzhao Chen ◽  
Xinxin Li
Keyword(s):  
Theoretical Analysis ◽  
Material Characterization ◽  
High Performance ◽  
Nanowire Array ◽  
Zno Nanowires ◽  
The Novel ◽  
Zno Nanowire ◽  
Trace Level ◽  
Designed Experiments ◽  
H2s Detection

This study presents a novel sulfuration–desulfuration sensing effect of an intrinsic (i.e., uncatalyzed) ZnO nanowire array for trace-level detection of H2S. The novel H2S sensing mechanism is clarified by specifically designed experiments, material characterization and theoretical analysis.

ZnO-Nanowire-Inserted GaN/ZnO Heterojunction Light-Emitting Diodes

Small ◽  
2007 ◽  
Vol 3 (4) ◽  
pp. 568-572 ◽  
Author(s):  
Min-Chang Jeong ◽  
Byeong-Yun Oh ◽  
Moon-Ho Ham ◽  
Sang-Won Lee ◽  
Jae-Min Myoung
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanowire ◽  
Light Emitting

scholarly journals Retracted Article: Wavelength modulation of ZnO nanowire based organic light-emitting diodes with ultraviolet electroluminescence

RSC Advances ◽  
2020 ◽  
Vol 10 (40) ◽  
pp. 23775-23781 ◽  
Author(s):  
Runze Chen ◽  
Chuan Liu ◽  
Kyeiwaa Asare-Yeboah ◽  
Ziyang Zhang ◽  
Zhengran He ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Wavelength Modulation ◽  
Zno Nanowire ◽  
Oled Device ◽  
Light Emitting ◽  
Oxide Nanowires ◽  
Electron Injection Layer ◽  
Organic Light ◽  
Retracted Article

As organic light emitting diodes (OLEDs) find important applications in display-related fields, we demonstrate the fabrication of an inverted UV-OLED device with tunable wavelength that composes zinc oxide nanowires as an electron injection layer.

Synthesis and characterization of PEDOT:PSS/ZnO nanowires heterojunction on ITO coated plastic substrate for light-emitting diodes

2019 ◽  
Vol 15 ◽  
pp. 394-399
Author(s):  
Kanchana Shahi ◽  
RS Singh ◽  
Narendra P. Singh ◽  
Mariya Aleksandrova ◽  
Ajaya Kumar Singh
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanowires ◽  
Plastic Substrate ◽  
Synthesis And Characterization ◽  
Light Emitting
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