scholarly journals ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators

2006 ◽  
Vol 88 (21) ◽  
pp. 212903 ◽  
Author(s):  
J. Siddiqui ◽  
E. Cagin ◽  
D. Chen ◽  
J. D. Phillips
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Gate Insulators

ZnO Thin-Film Transistors with SiNx/SiOx Stacked Gate Insulators: Trap Densities and N2O Flow Rate Dependence

2011 ◽  
Vol 14 (9) ◽  
pp. H365
Author(s):  
Mutsumi Kimura ◽  
Mamoru Furuta ◽  
Yudai Kamada ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Thin Film Transistors ◽  
Rate Dependence ◽  
Zno Thin Film ◽  
Gate Insulators

Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

2014 ◽  
Vol 313 ◽  
pp. 382-388 ◽  
Author(s):  
Sungmi Yoo ◽  
Jun-Young Yoon ◽  
Juwhan Ryu ◽  
Yun Ho Kim ◽  
Jae-Won Ka ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Gate Insulators

Characterization of magnesium oxide gate insulators grown using RF sputtering for ZnO thin-film transistors

2014 ◽  
Vol 14 (5) ◽  
pp. 794-797 ◽  
Author(s):  
Jong Hoon Lee ◽  
Hong Seung Kim ◽  
Sang Hyun Kim ◽  
Nak Won Jang ◽  
Young Yun
Keyword(s):  
Thin Film ◽  
Magnesium Oxide ◽  
Thin Film Transistors ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Gate Insulators

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Post Annealing

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

2012 ◽  
Vol 29 (1) ◽  
pp. 018501 ◽  
Author(s):  
Shao-Juan Li ◽  
Xin He ◽  
De-Dong Han ◽  
Lei Sun ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film

Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

2016 ◽  
Vol 18 (12) ◽  
pp. 8522-8528 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Yun Ho Kim ◽  
Kwang-Suk Jang
Keyword(s):  
Thin Film ◽  
Maleic Anhydride ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Surface Grafting ◽  
Gate Insulators ◽  
Poly Ethylene

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

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