scholarly journals Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements

2006 ◽  
Vol 88 (14) ◽  
pp. 142106 ◽  
Author(s):  
N. Biyikli ◽  
J. Xie ◽  
Y.-T. Moon ◽  
F. Yun ◽  
C.-G. Stefanita ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Hall Measurements ◽  
Variable Field ◽  
Quantitative Mobility Spectrum Analysis

Characterizing Multi-Carrier Devices with Quantitative Mobility Spectrum Analysis and Variable Field Hall Measurements

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1055-1058 ◽  
Author(s):  
Gang Du ◽  
J. R. Lindemuth ◽  
B. C. Dodrill ◽  
R. Sandhu ◽  
M. Wojtowicz ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Hall Measurements ◽  
Variable Field ◽  
Quantitative Mobility Spectrum Analysis

scholarly journals Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements

2006 ◽  
Vol 527-529 ◽  
pp. 1533-1536
Author(s):  
N. Biyikli ◽  
Cole W. Litton ◽  
J. Xie ◽  
Y.T. Moon ◽  
F. Yun ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Carrier Transport ◽  
High Mobility ◽  
Field Range ◽  
Mobility Spectrum ◽  
Hall Measurements ◽  
Variable Field ◽  
Temperature Range ◽  
Average Electron ◽  
Quantitative Mobility Spectrum Analysis

Carrier transport properties of AlGaN/GaN heterostructures have been analyzed with the quantitative mobility spectrum analysis (QMSA) technique. The nominally-undoped Al0.15Ga0.85N/GaN sample was grown by metal-organic vapor phase epitaxy. Variable-magneticfield Hall measurements were carried out in the temperature range of 4-160 K and magnetic field range of 0-6.6 T. QMSA was applied to the experimental variable-field data to extract the concentrations and mobilities associated with the high-mobility 2DEG and the relatively lowmobility bulk electrons for the temperature range investigated. For temperatures below 100 K the calculated mobility and carrier density values were close to the experimental results. No bulk conduction was observed in this temperature range. At 160 K, QMSA results show that parallel conduction in 3 mm thick GaN layer started to affect the average electron mobility.

Quantitative mobility spectrum analysis (QMSA) for hall characterization of electrons and holes in anisotropic bands

1999 ◽  
Vol 28 (5) ◽  
pp. 548-552 ◽  
Author(s):  
I. Vurgaftman ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
S. Cho ◽  
J. B. Ketterson ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Quantitative Mobility Spectrum Analysis

Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures

2004 ◽  
Vol 33 (6) ◽  
pp. 673-683 ◽  
Author(s):  
J. Antoszewski ◽  
L. Faraone ◽  
I. Vurgaftman ◽  
J. R. Meyer ◽  
C. A. Hoffman
Keyword(s):  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Quantitative Mobility Spectrum Analysis

Advanced magneto-transport characterization of LPE-grown Hg1-xCdx Te by quantitative mobility spectrum analysis

1996 ◽  
Vol 25 (8) ◽  
pp. 1157-1164 ◽  
Author(s):  
J. R. Meyer ◽  
C. A. Hoffman ◽  
F. J. Bartoli ◽  
J. Antoszewski ◽  
L. Faraone ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Quantitative Mobility Spectrum Analysis
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