Electrical resistivity of Cu films deposited by ion beam deposition: Effects of grain size, impurities, and morphological defect

2006 ◽  
Vol 99 (9) ◽  
pp. 094909 ◽  
Author(s):  
J.-W. Lim ◽  
M. Isshiki
Keyword(s):  
Grain Size ◽  
Electrical Resistivity ◽  
Ion Beam ◽  
Cu Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

Grain size of nanocrystalline YSZ buffer layers fabricated by ion beam deposition

2011 ◽  
Vol 471 (21-22) ◽  
pp. 770-773 ◽  
Author(s):  
F. Feng ◽  
K. Shi ◽  
Z. Wang ◽  
B.-J. Yan ◽  
Z.-J. Zhao ◽  
...  
Keyword(s):  
Grain Size ◽  
Ion Beam ◽  
Buffer Layers ◽  
Ion Beam Deposition ◽  
Beam Deposition

Effect of substrate bias voltage on the purity of Cu films deposited by non-mass separated ion beam deposition

2003 ◽  
Vol 434 (1-2) ◽  
pp. 30-33 ◽  
Author(s):  
J.-W. Lim ◽  
K. Mimura ◽  
K. Miyake ◽  
M. Yamashita ◽  
M. Isshiki
Keyword(s):  
Bias Voltage ◽  
Ion Beam ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Cu Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

Growth of Low-Temperature Polycrystalline Si Film by Direct Negative Si Ion Beams

1996 ◽  
Vol 438 ◽  
Author(s):  
M. H. Sohn ◽  
D. Kim ◽  
Y. O. Ahn ◽  
S. I. Kim
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Beam Energy ◽  
Liquid Crystal Display ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Deposition Process ◽  
Major Barrier ◽  
Ion Beam Deposition ◽  
Beam Deposition

AbstractPolycrystalline Si (Poly-Si) films were successfully grown at temperature less than 500 °C by using a direct Si ion beam deposition technique. In this process, the ion beam energy of Si- is directly coupled to the formation of the films. High substrate temperature (>600 °C), normally required for conventional CVD techniques, has been a major barrier for the Poly-Si Thin Film Transistor Liquid Crystal Display (TFT LCD) which uses a glass substrate. Thus, the ability to produce Poly-Si film below the glass transition temperature and to control the grain size will make this direct Si- ion beam deposition process a potential alternative technique for future TFT LCD. The grain size dependence on the ion beam energy and substrate temperature was investigated using a Transmission Electron Microscope (TEM). The grain size could be controlled from 0.1 μm to 1 μm at ion beam energies from 10 to 50 eV with a substrate temperature less than 500 °C. The resistivity of the as-deposited film was of the order of 100 Ωcm due to in-situ doping effect.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Ion beam deposition of alumina for recording head applications

1995 ◽  
Vol 31 (6) ◽  
pp. 2694-2696 ◽  
Author(s):  
M. Tan ◽  
S.-I. Tan ◽  
Yong Shen
Keyword(s):  
Ion Beam ◽  
Recording Head ◽  
Ion Beam Deposition ◽  
Beam Deposition

Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition

2004 ◽  
Vol 85 (9) ◽  
pp. 1595-1597 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Ion Beam Deposition ◽  
Si Nanocrystals ◽  
Selective Formation ◽  
Beam Deposition
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