scholarly journals High-mobility electronic transport in ZnO thin films

2006 ◽  
Vol 88 (15) ◽  
pp. 152106 ◽  
Author(s):  
A. Tsukazaki ◽  
A. Ohtomo ◽  
M. Kawasaki
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
High Mobility ◽  
Zno Thin Films

scholarly journals Nonthermal Crystalline Forming of Ceramic Nanoparticles by Non-Equilibrium Excitation Reaction Field of Electron

2021 ◽  
Author(s):  
Norihiro Shimoi
Keyword(s):  
Thin Films ◽  
Film Formation ◽  
High Mobility ◽  
Zno Thin Films ◽  
Reaction Field ◽  
Wet Process ◽  
Interface Control ◽  
Zno Particles ◽  
Pet Film ◽  
Non Equilibrium

In this work, we have discovered a method of forming ZnO thin films with high mobility, high carrier density and low resistivity on plastic (PET) films using non-equilibrium reaction fields, even when the films are deposited without heating, and we have also found a thin film formation technique using a wet process that is different from conventional deposition techniques. The field emission electron-beam irradiation treatment energetically activates the surface of ZnO particles and decomposes each ZnO particles. The energy transfer between zinc ions and ZnO surface and the oxygen present in the atmosphere around the ZnO particles induce the oxidation of zinc. In addition, the ZnO thin films obtained in this study successfully possess high functional thin films with high electrical properties, including high hole mobility of 208.6 cm2/Vs, despite being on PET film substrates. These results contribute to the discovery of a mechanism to create highly functional oxide thin films using a simple two-dimensional process without any heat treatment on the substrate or during film deposition. In addition, we have elucidated the interfacial phenomena and crosslinking mechanisms that occur during the bonding of metal oxide particles, and understood the interfacial physical properties and their effects on the electronic structure. and surface/interface control, and control of higher-order functional properties in metal/ceramics/semiconductor composites, and contribute to the provision of next-generation nanodevice components in a broad sense.

High mobility transparent conductive Al-doped ZnO thin films by atomic layer deposition

2017 ◽  
Vol 727 ◽  
pp. 565-571 ◽  
Author(s):  
Man-Ling Lin ◽  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
Hsin-Yi Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Mobility ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Doped Zno

High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer

2005 ◽  
Vol 86 (1) ◽  
pp. 012109 ◽  
Author(s):  
E. Bellingeri ◽  
D. Marré ◽  
I. Pallecchi ◽  
L. Pellegrino ◽  
A. S. Siri
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
High Mobility ◽  
Zno Thin Films ◽  
Nucleation Layer

scholarly journals Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

2015 ◽  
Vol 107 (23) ◽  
pp. 232103 ◽  
Author(s):  
Vladimir L. Kuznetsov ◽  
Alex T. Vai ◽  
Malek Al-Mamouri ◽  
J. Stuart Abell ◽  
Michael Pepper ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Si Doped ◽  
Doped Zno

ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

2010 ◽  
Vol 24 (31) ◽  
pp. 6079-6090 ◽  
Author(s):  
I. I. RUSU ◽  
M. SMIRNOV ◽  
G. G. RUSU ◽  
A. P. RAMBU ◽  
G. I. RUSU
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Crystallite Boundary

Zinc oxide ( ZnO ) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (Eg0 = 3.28–3.37 eV ) was determined from absorption spectra.

High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering

2008 ◽  
Vol 8 (9) ◽  
pp. 4557-4560 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Dae-Yong Moon ◽  
Sang-Ho Lee ◽  
Chang-Oh Jeong ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Low Voltage ◽  
Chemical Properties ◽  
High Mobility ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
Channel Layer

Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (μsat) of 1.8 cm2/Vs and threshold voltage (Vth) of −0.7 V were obtained.

High-quality UV optoelectrical and high-mobility T-ODL/Ti:ZnO epilayers on an amorphous substrate through tailoring the interfacial nucleation process by atomic layer deposition

2018 ◽  
Vol 6 (38) ◽  
pp. 10350-10359 ◽  
Author(s):  
Jin Li ◽  
Xiaofang Bi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Mobility ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Nucleation Process ◽  
High Quality ◽  
Layer Deposition ◽  
Amorphous Substrate

Tailoring nucleation process through ODL to gain highly oriented ZnO thin films with excellent UV luminescent and electrical performances.

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