In situ resonant x-ray study of vertical correlation and capping effects during GaN∕AlN quantum dot growth

2006 ◽  
Vol 88 (15) ◽  
pp. 153125 ◽  
Author(s):  
J. Coraux ◽  
H. Renevier ◽  
V. Favre-Nicolin ◽  
G. Renaud ◽  
B. Daudin
2005 ◽  
Vol 16 (8) ◽  
pp. 1326-1334 ◽  
Author(s):  
V N Strocov ◽  
G E Cirlin ◽  
J Sadowski ◽  
J Kanski ◽  
R Claessen

2007 ◽  
Vol 32 (1) ◽  
pp. 209-214
Author(s):  
Masamitu Takahasi ◽  
Toshiyuki Kaizu ◽  
Jun'ichiro Mizuki

2020 ◽  
Vol 12 (41) ◽  
pp. 46942-46952
Author(s):  
Wei Chen ◽  
Suzhe Liang ◽  
Franziska C. Löhrer ◽  
Simon J. Schaper ◽  
Nian Li ◽  
...  

2020 ◽  
Vol 53 (4) ◽  
pp. 1029-1038
Author(s):  
Ashin Shaji ◽  
Maja Micetic ◽  
Yuriy Halahovets ◽  
Peter Nadazdy ◽  
Igor Matko ◽  
...  

A laboratory in situ grazing-incidence small-angle X-ray scattering (GISAXS) tracking of the self-assembled growth of a regular 3D Ge quantum dot (QD) structure in an amorphous Al2O3 matrix during the ion beam sputter deposition of a periodic Ge/Al2O3 multilayer on silicon is reported. A 573 K substrate temperature proved to be necessary to achieve the self-assembly effect. Relying on a fast repeated acquisition of GISAXS patterns, the temporal evolution of the growing 3D Ge QD structure was analyzed bilayer by bilayer to determine its type, lateral and vertical correlation lengths, and inter-QD distance. The QD structure was found to have body-centered tetragonal lattice type with ABA stacking, with the lattice parameters refined by fitting the final GISAXS pattern relying on a paracrystal model. A single set of paracrystal parameters enables one to simulate the temporal evolution of the in situ GISAXS patterns throughout the deposition process, suggesting that the Ge QD self-assembly is driven from the very beginning solely by the growing surface morphology. Ex situ GISAXS and X-ray reflectivity measurements along with a cross-section high-resolution transmission electron microscopy analysis complete the study.


Author(s):  
R. E. Herfert

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.


1997 ◽  
Vol 7 (C2) ◽  
pp. C2-619-C2-620 ◽  
Author(s):  
M. Giorgett ◽  
I. Ascone ◽  
M. Berrettoni ◽  
S. Zamponi ◽  
R. Marassi

2019 ◽  
Author(s):  
Christian Prehal ◽  
Aleksej Samojlov ◽  
Manfred Nachtnebel ◽  
Manfred Kriechbaum ◽  
Heinz Amenitsch ◽  
...  

<b>Here we use in situ small and wide angle X-ray scattering to elucidate unexpected mechanistic insights of the O2 reduction mechanism in Li-O2 batteries.<br></b>


2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.


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