Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress

2006 ◽  
Vol 88 (14) ◽  
pp. 143502 ◽  
Author(s):  
Pushkar Jain ◽  
Jasbir S. Juneja ◽  
A. Mallikarjunan ◽  
E. J. Rymaszewski ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Temperature Stress ◽  
High Dielectric Constant ◽  
Tantalum Oxide ◽  
Oxide Thin Films ◽  
Bias Temperature Stress ◽  
High Dielectric

MOCVD of High-Dielectric-Constant Lanthanum Oxide Thin Films

2003 ◽  
Vol 150 (8) ◽  
pp. G429 ◽  
Author(s):  
Hirotoshi Yamada ◽  
Takashi Shimizu ◽  
Akira Kurokawa ◽  
Kenichi Ishii ◽  
Eiichi Suzuki
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Lanthanum Oxide ◽  
High Dielectric Constant ◽  
Oxide Thin Films ◽  
High Dielectric

Synthesis of High Dielectric Constant Titanium Oxide Thin Films by Metalorganic Decomposition

2002 ◽  
Vol 41 (Part 1, No. 11B) ◽  
pp. 6912-6915 ◽  
Author(s):  
Hisashi Fukuda ◽  
Shinichi Maeda ◽  
K. M. A. Salam ◽  
Shigeru Nomura
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Titanium Oxide ◽  
High Dielectric Constant ◽  
Oxide Thin Films ◽  
Metalorganic Decomposition ◽  
High Dielectric

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Novel Mocvd Processes for Nanoscale Oxide Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzkp ◽  
Richard A. Stall ◽  
Yongfei Zhu ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Integrated Circuits ◽  
Deposition Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
High Quality ◽  
Step Process ◽  
High Dielectric

AbstractNanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.

Sign in / Sign up

Export Citation Format

Share Document