Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition

2006 ◽  
Vol 88 (13) ◽  
pp. 132901 ◽  
Author(s):  
Jong Kuk Kim ◽  
Sang Su Kim ◽  
Won-Jeong Kim ◽  
Amar S. Bhalla ◽  
Ruyan Guo
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

Ferroelectric Properties of (La, Mn)-Codoped BiFeO3 Thin Films Prepared by Chemical Solution Deposition

2007 ◽  
Vol 51 (12) ◽  
pp. 138 ◽  
Author(s):  
Eun Jin CHOI ◽  
Sang Su KIM ◽  
Jin Won KIM ◽  
Moon Heum PARK ◽  
Hyun Kyung CHO ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Critical Role ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

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