scholarly journals Electromechanical coupling factors of single-domain 0.67Pb(Mg1∕3Nb2∕3)O3–0.33PbTiO3 single-crystal thin films

2006 ◽  
Vol 88 (12) ◽  
pp. 122903 ◽  
Author(s):  
K. Wasa ◽  
S. Ito ◽  
K. Nakamura ◽  
T. Matsunaga ◽  
I. Kanno ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Electromechanical Coupling ◽  
Single Domain ◽  
Coupling Factors

Structure and Electromechanical Properties of Quenched PMN-PT Single Crystal Thin Films

2006 ◽  
Vol 45 ◽  
pp. 1212-1217 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Isaku Kanno ◽  
Takaaki Suzuki
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Electromechanical Coupling ◽  
Electromechanical Coupling Factor ◽  
Coupling Factor ◽  
Bulk Single Crystal ◽  
Heteroepitaxial Growth ◽  
Electromechanical Properties ◽  
Sputtering Deposition ◽  
Sputtered Films

Thin films of single c-domain/single crystal (1-x)Pb(Mg1/3Nb2/3)O3－xPbTiO3 (PMN-PT), x≅0.33 near a morphotropic boundary (MPB) composition, were heteroepitaxially grown on (110)SRO/(001)Pt/(001)MgO substrates by magnetron sputtering. The heteroepitaxial growth was achieved by rf-magneron sputtering at the substrate temperature of 600oC. After sputtering deposition, the sputtered films were quenched from 600oC to room temperature in atmospheric air. The quenching enhanced the heteroepitaxial growth of the stress reduced single c-domain/single crystal PMN-PT thin films. Their electromechanical coupling factor kt measured by a resonance spectrum method was 45% at resonant frequency of 1.3GHz with phase velocity of 5500 to 6000m/s for the film thickness of 2.3μm. The d33 and d31 were 194pC/N and –104pC/N, respectively. The observed kt , d33 ,and d31were almost the same to the bulk single crystal values.

scholarly journals Anisotropy Factors and Electromechanical Coupling in Lead-Free 1–3-Type Composites

2019 ◽  
Author(s):  
Chris Bowen
Keyword(s):  
Single Crystal ◽  
Polymer Matrix ◽  
Electromechanical Coupling ◽  
Volume Fraction ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Aspect Ratios ◽  
Polymer Component ◽  
Coupling Factors

The effective electromechanical properties andanisotropy factors of novel lead-free 1–3-type compositesare studied to demonstrate their large piezoelectricanisotropy and considerable level of electromechanicalcoupling. The composites studied contain two single-crystal components and a polymer component. The firstpiezo-active component is a domain-engineered [001]-poled single crystal based on ferroelectric alkali niobates-tantalates, and this component is in the form of a system oflong rods that are parallel to the poling axis OX3. Thesecond single-crystal component is a system of spheroidalpiezoelectric Li2B4O7 inclusions aligned in a continuousand relatively large polymer matrix. The single-crystalrods are surrounded by a single crystal / polymer matrix,and the connectivity of the composite is 1–0–3. It is shownthat the conditions d * /| d * | 3 5, which indicates a large 33 31degree of anisotropy of the piezoelectric coefficients, and k* /|k* |35and k*/|k*|35,whichindicatealargeanisotropyof the electromechanical coupling factors, can be achievedsimultaneously in specific ranges of the component volumefractions and inclusion aspect ratios. Moreover, in thesame volume-fraction and aspect-ratio ranges, largeelectromechanical coupling factors (k* » k* » 0.8–0.9) are 33 talso achieved. In this context, the important role of the elastic properties of the continuous anisotropic matrix is discussed. The properties and anisotropy factors of the lead-free 1–3-type composites are compared to similar parameters of conventional lead-containing piezoelectric materials, and the advantages of the composite system studied are described.

Basic sputtering process and ferroelectric properties of single–domain single–crystal thin films of PbTiO3

1998 ◽  
Vol 21 (1-4) ◽  
pp. 451-460 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Yoko Haneda ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Isaku Kanno ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Ferroelectric Properties ◽  
Single Domain

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Single crystal-like thin films of blue bronze

2021 ◽  
pp. 138745
Author(s):  
Damir Dominko ◽  
Damir Starešinić ◽  
Katica Biljaković ◽  
Maja Đekić ◽  
Amra Salčinović Fetić ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Blue Bronze

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

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