scholarly journals Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

2006 ◽  
Vol 88 (12) ◽  
pp. 123508 ◽  
Author(s):  
Youn-Seon Kang ◽  
Qian Fan ◽  
Bo Xiao ◽  
Ya. I. Alivov ◽  
Jinqiao Xie ◽  
...  
2002 ◽  
Vol 747 ◽  
Author(s):  
A. G. Schrott ◽  
J. A. Misewich ◽  
R. Ramesh ◽  
V. Nagarajan

ABSTRACTA ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.


Author(s):  
Samuel E. Hall ◽  
Jaime E. Regis ◽  
Anabel Renteria ◽  
Luis A. Chavez ◽  
Luis Delfin ◽  
...  

2012 ◽  
Vol 100 (11) ◽  
pp. 113507 ◽  
Author(s):  
Chun-Yi Hsieh ◽  
Yung-Ting Chen ◽  
Wei-Jyun Tan ◽  
Yang-Fang Chen ◽  
Wan Y. Shih ◽  
...  

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