Observations Made on Domain Walls in Thin Films

1959 ◽  
Vol 30 (4) ◽  
pp. S84-S85 ◽  
Author(s):  
Harrison W. Fuller ◽  
Harvey Rubinstein
Keyword(s):  
Thin Films ◽  
Domain Walls

Bifurcation and domain walls in thin films of liquid crystals

1989 ◽  
Vol 6 (4) ◽  
pp. 417-433 ◽  
Author(s):  
P. Schiller ◽  
G. Pelzl ◽  
D. Demus
Keyword(s):  
Thin Films ◽  
Liquid Crystals ◽  
Domain Walls

Some Observations on the Domain Walls in Thin Films

1960 ◽  
Vol 15 (6) ◽  
pp. 1126-1127 ◽  
Author(s):  
Yasuo Gondō ◽  
Zenya Funatogawa
Keyword(s):  
Thin Films ◽  
Domain Walls

Observations of Domain Structure at Initial Growth Stage of PbTiO3 Thin Films Grown by Mocvd

1999 ◽  
Vol 596 ◽  
Author(s):  
H. Fujisawa ◽  
M. Shimizu ◽  
H. Niu ◽  
K. Honda ◽  
S Ohtani
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Growth Stage ◽  
Domain Walls ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Continuous Film ◽  
Cross Sectional ◽  
Initial Growth Stage ◽  
Transmission Electron

AbstractDomain structure and growth mechanism of PbTiO3 thin films were investigated using a transmission electron microscopy(TEM) from the viewpoint of size effects. At initial growth stage of (111)-oriented PbTiO3 films prepared by metalorganic chemical vapor deposition(MOCVD), triangle-shaped islands were grown on Pt(111)/SiO2/Si before becoming a continuous film. Triangular islands grew gradually in a lateral dimension. This means that PbTiO3 films grew two-dimensionally at initial growth stage. In cross-sectional TEM photomicrographs, (101)-twin boundaries (90° domain walls) and inclination of {110} or {101}-plane were observed in PbTiO3 islands. This result indicates that such small PbTiO3 islands have a tetragonal structure and could have spontaneous polarization. The minimum island which had 90° domain walls was 10nm high and 18nm wide.

Domain structure in LaFeO3 thin films and its role on exchange coupling

2001 ◽  
Vol 666 ◽  
Author(s):  
Jin Won Seo ◽  
Jean Fompeyrine ◽  
Heinz Siegwart ◽  
Jean-Pierre Locquet
Keyword(s):  
Thin Films ◽  
Exchange Bias ◽  
Domain Walls ◽  
Surface Defects ◽  
Structural Parameters ◽  
Domain Size ◽  
Coupled Systems ◽  
Epitaxial Relationship ◽  
Ferromagnetic Domains ◽  
Individual Contributions

ABSTRACTThe origin of the exchange bias between a ferro- and an antiferromagnet still is not fully resolved. Many structural parameters such as film thickness, roughness, domain size, domain walls, strain, dislocations, and surface defects play a role. To disentangle their individual contributions, one must correlate each of these structural effects with the exchange bias. Here we report our first such attempts using thin films of the antiferromagnetic orthoferrite LaFeO3 grown by molecular beam epitaxy. We investigate how the epitaxial relationship and strain affect the domain configuration as well as their size and orientation. Next, we explore how these different domains can pin ferromagnetic domains in exchange-coupled systems. We conclude that decreasing the domain size of the antiferromagnet leads to a higher exchange bias. The highest exchange bias was obtained for LaFeO3 films on MgO substrates.

scholarly journals Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

2016 ◽  
Vol 94 (10) ◽  
Author(s):  
Myung-Geun Han ◽  
Joseph A. Garlow ◽  
Matthieu Bugnet ◽  
Simon Divilov ◽  
Matthew S. J. Marshall ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Walls ◽  
Oxide Thin Films ◽  
Crystallographic Shear ◽  
Shear Planes ◽  
Ferroelectric Oxide
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