Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon

2006 ◽  
Vol 99 (6) ◽  
pp. 064105 ◽  
Author(s):  
A. Goldenblum ◽  
I. Pintilie ◽  
M. Buda ◽  
A. Popa ◽  
M. Lisca ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gate Dielectrics ◽  
High K

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 250-254 ◽  
Author(s):  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Hidemi Takasu ◽  
Paul Fons ◽  
Kakuya Iwata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

1991 ◽  
Vol 110 (4) ◽  
pp. 910-914 ◽  
Author(s):  
K. Rakennus ◽  
K. Tappura ◽  
T. Hakkarainen ◽  
H. Asonen ◽  
R. Laiho ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source ◽  
Interface Effects
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