Enhanced internal quantum efficiency and light extraction efficiency from textured GaN∕AlGaN quantum wells grown by molecular beam epitaxy

2006 ◽  
Vol 99 (6) ◽  
pp. 064904 ◽  
Author(s):  
J. S. Cabalu ◽  
C. Thomidis ◽  
T. D. Moustakas ◽  
S. Riyopoulos ◽  
Lin Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Extraction Efficiency ◽  
Internal Quantum Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency

Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy

2009 ◽  
Vol 1202 ◽  
Author(s):  
Yitao Liao ◽  
Christos Thomidis ◽  
Anirban Bhattacharyya ◽  
Chen-kai Kao ◽  
Adam Moldawer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Light Extraction Efficiency ◽  
Rf Plasma ◽  
Wafer Level ◽  
Deep Uv ◽  
Uv Leds

AbstractIn this paper, we report the development of AlGaN-based deep ultraviolet LEDs by rf plasma-assisted molecular beam epitaxy (MBE) emitting between 277 and 300 nm. Some of these devices were evaluated after fabrication at bare-die and some at wafer-level configurations. Devices with total optical output of 1.3 mW at injection current of 200 mA were produced, with maximum external quantum efficiency (EQE) of 0.16%. These performance values are equivalent to those reported for deep UV-LEDs grown by the Metalorganic chemical vapor deposition (MOCVD) method and measured at bare-die configuration. In parallel, we have evaluated the internal quantum efficiency (IQE) of AlGaN quantum wells, and found that such wells emitting at 250 nm have an IQE of 50%. From the analysis of these data, we concluded that the efficiency of deep UV LEDs is not limited by the IQE but by the light extraction efficiency, injection efficiency or a combination of both.

Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 2 (5) ◽  
pp. 271-276
Author(s):  
Gordie Brummer ◽  
Denis Nothern ◽  
T.D. Moustakas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Light Emitting

ABSTRACTAlGaN based multiple quantum wells (MQWs) were grown on 8° vicinal 4H p-SiC substrates by plasma-assisted molecular beam epitaxy. The MQWs were designed to emit near 300 nm using the wurtzite k.p model. The MQW periodicity and strain state were measured with X-ray diffraction. The optical properties were characterized with temperature dependent photoluminescence (PL). The internal quantum efficiency was estimated from the ratio of room temperature to 18K integrated PL intensity. Internal quantum efficiency up to 48% was achieved. These data are encouraging for future vertical and inverted ultraviolet light emitting diodes grown on p-SiC substrates.

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