Synthesis and room temperature ferromagnetism of FeCo-codoped ZnO nanowires

2006 ◽  
Vol 88 (6) ◽  
pp. 063104 ◽  
Author(s):  
L. Q. Liu ◽  
B. Xiang ◽  
X. Z. Zhang ◽  
Y. Zhang ◽  
D. P. Yu
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Nanowires

Trapping of Ce electrons in band gap and room temperature ferromagnetism of Ce4+ doped ZnO nanowires

2009 ◽  
Vol 106 (8) ◽  
pp. 083515 ◽  
Author(s):  
Javed Iqbal ◽  
Xiaofang Liu ◽  
Huichao Zhu ◽  
Chongchao Pan ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Nanowires ◽  
Doped Zno

ZnO Spintronics and Nanowire Devices

2004 ◽  
Vol 829 ◽  
Author(s):  
David P. Norton ◽  
Young-Woo Heo ◽  
L C Tien ◽  
M P Ivill ◽  
Y Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Field Effect Transistors ◽  
Room Temperature Ferromagnetism ◽  
Schottky Diodes ◽  
Minor Component ◽  
Zno Nanowires ◽  
Oxide Semiconductor ◽  
Magnetic Polaron ◽  
Uv Illumination ◽  
Decay Times

ABSTRACTZnO is a very promising material for spintronics applications, with many groups reporting room temperature ferromagnetism in films doped with transition metals during growth or by ion implantation. In films doped with Mn during PLD, we find an inverse correlation between magnetization and electron density as controlled by Sn doping. The saturation magnetization and coercivity of the implanted single-phase films were both strong functions of the initial anneal temperature, suggesting that carrier concentration alone cannot account for the magnetic properties of ZnO:Mn and factors such as crystalline quality and residual defects play a role. Plausible mechanisms for the ferromagnetism include the bound magnetic polaron model or exchange is mediated by carriers in a spin-split impurity band derived from extended donor orbitals. We will also review progress in ZnO nanowires. The large surface area of nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them candidates for micro-lasers or memory arrays. Single ZnO nanowire depletion-mode metal-oxide semiconductor field effect transistors exhibit good saturation behavior, threshold voltage of ∼-3V and a maximum transconductance of 0.3 mS/mm. Under UV illumination, the drain-source current increased by approximately a factor of 5 and the maximum transconductance was ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm2 /V.s, comparable to that for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination. Pt Schottky diodes exhibit excellent ideality factors of 1.1 at 25 °C, very low reverse currents and a strong photoresponse, with only a minor component with long decay times thought to originate from surface states. In the temperature range from 25–150 °C, the resistivity of nanorods treated in H2 at 400 °C prior to measurement showed an activation energy of 0.089 eV and was insensitive to the ambient used. By contrast, the conductivity of nanorods not treated in H2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors. We have also made sensitive pH sensors using single ZnO nanowires.

Comparative Study of Room-Temperature Ferromagnetism in Cu-Doped ZnO Nanowires Enhanced by Structural Inhomogeneity

2008 ◽  
Vol 20 (18) ◽  
pp. 3521-3527 ◽  
Author(s):  
Guo Zhong Xing ◽  
Jia Bao Yi ◽  
Jun Guang Tao ◽  
Tao Liu ◽  
Lai Mun Wong ◽  
...  
Keyword(s):  
Comparative Study ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Nanowires ◽  
Structural Inhomogeneity ◽  
Doped Zno

Room-temperature ferromagnetism in Cu+implanted ZnO nanowires

2008 ◽  
Vol 41 (13) ◽  
pp. 135010 ◽  
Author(s):  
M Shuai ◽  
L Liao ◽  
H B Lu ◽  
L Zhang ◽  
J C Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Nanowires

Evidence of Room Temperature Ferromagnetism in Vertically Aligned Bi-Co co-doped ZnO Nanowires

2021 ◽  
Author(s):  
Jamal Kazmi ◽  
Poh Choon Ooi ◽  
Syed Raza Ali Raza ◽  
Goh Boon Tong ◽  
Siti Shafura A Karim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Nanowires ◽  
Vertically Aligned ◽  
Doped Zno ◽  
Co Doped

Co-DOPED ZnO NANOWIRES GROWN BY VAPOR–LIQUID–SOLID METHOD: STRUCTURAL, OPTICAL AND MAGNETIC STUDIES

NANO ◽  
2012 ◽  
Vol 07 (04) ◽  
pp. 1250028 ◽  
Author(s):  
BAPPADITYA PAL ◽  
SOUMEN DHARA ◽  
P. K. GIRI
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Visible Region ◽  
Magnetic Behavior ◽  
Hexagonal Structure ◽  
Zno Nanowires ◽  
Magnetic Studies ◽  
Microscopy Imaging ◽  
Doped Zno ◽  
Co Doped

We report on the growth of Co -doped ZnO nanowires (NWs) on Si substrate using a self-catalytic vapor deposition method from a Co -doped ZnO nanopowder source and study its structural, optical and magnetic properties for the as-grown and rapid thermal annealed samples. Co (5%)-doped ZnO ( ZnCoO ) nanoparticles (NPs) are used as source material for the growth process. Electron microscopy imaging clearly reveals the formation of long ZnO NWs with uniform diameter. X-ray diffraction analysis confirms the single crystalline hexagonal structure of Co -doped ZnO NWs without impurities of metallic cobalt or other phases. Micro-Raman studies of doped samples show doping/disorder induced additional modes as compared to the undoped ZnO . Room temperature photoluminescence spectra of the doped ZnO NWs show strong emission band at ~380 nm and no significant emission was observed in the visible region indicating low defect content in the NWs. The field dependent magnetization (M–H curve) measured at room temperature exhibits paramagnetic nature for the NWs with the magnetic moment in the range 2–3.7 milli-emu/cm2 for the applied field of 2 Tesla, while the source ZnCoO NPs exhibit room temperature ferromagnetism with saturation magnetization ~6 emu/g. Possible mechanism of alteration in magnetic behavior in doped NWs are discussed based on the growth conditions and role of defects.

Oxygen vacancy mediated room temperature ferromagnetism in Cu-doped LiNbO3 thin films

2021 ◽  
Vol 527 ◽  
pp. 167775
Author(s):  
Xiaodong Zhou ◽  
Erlei Wang ◽  
Xiaodong Lao ◽  
Yongmei Wang ◽  
Honglei Yuan
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism
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