scholarly journals Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

2006 ◽  
Vol 77 (3) ◽  
pp. 03A510 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Toyoji Ishibashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Layer ◽  
Negative Ion ◽  
Nanoparticle Formation

scholarly journals Cathode Luminescence from SiO2 Layer Including Ge Nanoparticles Formed by Negative-Ion Implantation

2007 ◽  
Vol 32 (4) ◽  
pp. 903-906
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Kenji Kojima ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Layer ◽  
Negative Ion ◽  
Cathode Luminescence

Silver nanoparticle formation in thin oxide layer on silicon by silver-negative-ion implantation for Coulomb blockade at room temperature

2004 ◽  
Vol 238 (1-4) ◽  
pp. 132-137 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Takuya Matsumoto ◽  
Kazuya Ueno ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Oxide Layer ◽  
Silver Nanoparticle ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Negative Ion ◽  
Nanoparticle Formation ◽  
Thin Oxide Layer ◽  
Thin Oxide

Germanium Nanoparticle Formation into Thin SiO2 Films by Negative Ion Implantation and Their Electric Characteristics

2006 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Naoyuki Gotoh ◽  
Tetsuya Okumine ◽  
Toshio Yanagitani ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Negative Ion ◽  
Sio2 Films ◽  
Nanoparticle Formation

Germanium nanoparticle formation in thin oxide films on Si by negative-ion implantation

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8516-8520 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Toyotsugu Ishibashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Oxide Films ◽  
Negative Ion ◽  
Nanoparticle Formation ◽  
Thin Oxide Films ◽  
Thin Oxide

Germanium negative-ion implantation into SiO2 layer on Si

2011 ◽  
Vol 206 (5) ◽  
pp. 785-788 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Masashi Hattori ◽  
Masayuki Ohsaki ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Layer ◽  
Negative Ion

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

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