Erratum: “A novel technique for the in situ calibration and measurement of friction with the atomic force microscope” [Rev. Sci. Instrum. 76, 083710 (2005)]

2006 ◽  
Vol 77 (1) ◽  
pp. 019901 ◽  
Author(s):  
Johanna Stiernstedt ◽  
Mark W. Rutland ◽  
Phil Attard
Keyword(s):  
Atomic Force Microscope ◽  
Novel Technique ◽  
Atomic Force ◽  
In Situ Calibration

scholarly journals Atomic force microscope with an adjustable probe direction and piezoresistive cantilevers operated in tapping-mode / Im Tapping-Modus betriebenes Rasterkraftmikroskop mit einstellbarer Antastrichtung und piezoresistiven Cantilevern

2019 ◽  
Vol 86 (s1) ◽  
pp. 12-16
Author(s):  
Janik Schaude ◽  
Julius Albrecht ◽  
Ute Klöpzig ◽  
Andreas C. Gröschl ◽  
Tino Hausotte
Keyword(s):  
Atomic Force Microscope ◽  
Metrological Traceability ◽  
Step Height ◽  
Tapping Mode ◽  
Atomic Force ◽  
In Situ Calibration ◽  
Measuring Machine ◽  
Piezoresistive Cantilevers

AbstractThis article presents a new tilting atomic force microscope (AFM) with an adjustable probe direction and piezoresistive cantilever operated in tapping-mode. The AFM is based on two rotational axes, which enable the adjustment of the probe direction to cover a complete hemisphere. The whole setup is integrated into a nano measuring machine (NMM-1) and the metrological traceability of the piezoresistive cantilever is warranted by in situ calibration on the NMM-1. To demonstrate the capabilities of the tilting AFM, measurements were conducted on a step height standard.

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscope ◽  
High Speed ◽  
Normal Incidence ◽  
Organic Thin Film ◽  
X Ray ◽  
Atomic Force ◽  
Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

scholarly journals In situ observation of streptavidin-biotin binding on an immunoassay well surface using an atomic force microscope

FEBS Letters ◽  
1996 ◽  
Vol 390 (2) ◽  
pp. 161-164 ◽  
Author(s):  
S. Allen ◽  
J. Davies ◽  
A.C. Dawkes ◽  
M.C. Davies ◽  
J.C. Edwards ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
In Situ Observation ◽  
Atomic Force ◽  
Biotin Binding

scholarly journals Nanopipette/Nanorod-Combined Quartz Tuning Fork–Atomic Force Microscope

Sensors ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 1794 ◽  
Author(s):  
Sangmin An ◽  
Wonho Jhe
Keyword(s):  
Atomic Force Microscope ◽  
Tuning Fork ◽  
High Sensitivity ◽  
Quartz Tuning Fork ◽  
Force Sensor ◽  
Au Nanoparticle ◽  
Ambient Conditions ◽  
Atomic Force ◽  
In Situ Detection

We introduce a nanopipette/quartz tuning fork (QTF)–atomic force microscope (AFM) for nanolithography and a nanorod/QTF–AFM for nanoscratching with in situ detection of shear dynamics during performance. Capillary-condensed nanoscale water meniscus-mediated and electric field-assisted small-volume liquid ejection and nanolithography in ambient conditions are performed at a low bias voltage (~10 V) via a nanopipette/QTF–AFM. We produce and analyze Au nanoparticle-aggregated nanowire by using nanomeniscus-based particle stacking via a nanopipette/QTF–AFM. In addition, we perform a nanoscratching technique using in situ detection of the mechanical interactions of shear dynamics via a nanorod/QTF–AFM with force sensor capability and high sensitivity.

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

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