Optical Emission Spectroscopy to study FeCo thin film deposition using plasma focus

Author(s):  
T. Zhang
1997 ◽  
Vol 493 ◽  
Author(s):  
F. Ayguavives ◽  
P. Aubert ◽  
B. Ea-Kim ◽  
B. Agius

ABSTRACTLead zirconate titanate (PZT) thin films have been grown by rf magnetron sputtering on Si substrates from a metallic target of nominal composition Pb1.1(Zr0.4 Ti0.6 in a reactive argon / oxygen gas mixture. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements show clearly a correlation between the evolution of characteristic atomic emission line intensities (Zr - 386.4 nm, Ti - 399.9 nm, Pb - 405.8 nm and O - 777.2 nm) and the thin-film composition determined by a simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA).


1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.


2014 ◽  
Vol 1035 ◽  
pp. 373-378 ◽  
Author(s):  
Yan Chao Shi ◽  
Qin Jian Zhang ◽  
Jia Jun Li ◽  
Guang Chao Chen

Ar\H2\CH4 gas mixture was utilized to grow nanocrystal diamond films in a RF plasma enhanced CVD system. CH4\ H2 ratios were changed to study the effect of plasma radicals on the deposit, in which optical emission spectroscopy (OES) was applied to analyze the plasma radicals. It was found that Hα, Hβ, Hγ, CH, C2 were the main radicals in the plasma. Among them, the CH intensity of OES was usually quite strong and increased sharply when the ratio of CH4/H2 was greater than 3%. The intensity of C2 was weak and basically unchanged with the addition of methane. This study can provide a new possible technical application for depositing NCD films.


2006 ◽  
Vol 253 (3) ◽  
pp. 1611-1615 ◽  
Author(s):  
R.S. Rawat ◽  
T. Zhang ◽  
K.S. Thomas Gan ◽  
P. Lee ◽  
R.V. Ramanujan

1998 ◽  
Vol 125 (2) ◽  
pp. 227-235 ◽  
Author(s):  
Riju C. Issac ◽  
K. Vasudevan Pillai ◽  
S.S. Harilal ◽  
Geetha K. Varier ◽  
C.V. Bindhu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document