scholarly journals Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer

2005 ◽  
Vol 87 (26) ◽  
pp. 261901 ◽  
Author(s):  
M. Emziane ◽  
K. Durose ◽  
D. P. Halliday ◽  
A. Bosio ◽  
N. Romeo
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Absorber Layer ◽  
Efficiency Improvement

Three-dimensional reciprocal space profile of an individual nanocrystallite inside a thin-film solar cell absorber layer

2013 ◽  
Vol 46 (47) ◽  
pp. 475104
Author(s):  
Taras Slobodskyy ◽  
Philip Schroth ◽  
Andrey Minkevich ◽  
Daniil Grigoriev ◽  
Edwin Fohtung ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Absorber Layer

Growth of Large Grain Polycrystalline Silicon Thin Film on Soda-lime Glass at Low Temperature for Solar Cell Applications

2011 ◽  
Vol 1321 ◽  
Author(s):  
K. Wang ◽  
K. H. Wong
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Low Temperature ◽  
Thin Film Solar Cell ◽  
Seed Layer ◽  
Polycrystalline Silicon ◽  
Soda Lime ◽  
Absorber Layer ◽  
Soda Lime Glass ◽  
Si Thin Film

ABSTRACTHigh quality polycrystalline silicon (poly-Si) thin film solar cell was successfully fabricated on soda-lime glass substrates by electron beam (Ebeam) evaporation at low processing temperature. The initial poly-Si seed layer (p+-type 0.5 μm thick) was grown via the aluminum induced crystallization (AIC) method at 450 °C. Prominent interdiffusion and Si crystallization have been observed. X-ray diffraction (XRD) shows that (111) is the dominating crystalline orientation. Post annealing at 450 °C for six hours has produced densely packed Si grains with dimension of more than 10 μm in the plane of the film. Non-destructive Raman spectroscopy reveals the remarkable crystalline improvement for samples after thermal treatment. After removing the top diffused Al by chemical means, an absorber layer (p-type) of 0.9 μm thick was subsequently deposited onto the seed layer by Ebeam evaporation at 500 °C. Transmission electron microscopy (TEM) confirmed good homo-epitaxial growth. Without breaking the high vacuum, an n-type amorphous Si (a-Si) layer (0.7 μm thick) was coated onto the absorber layer to form p-n junction. The corresponding I-V characteristics suggest that our low temperature processing technique is applicable for production of poly-Si thin film solar cell on low cost substrates.

scholarly journals Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications

2015 ◽  
Vol 589 ◽  
pp. 563-573 ◽  
Author(s):  
Sebnem Yazici ◽  
Mehmet Ali Olgar ◽  
Fatime Gulsah Akca ◽  
Ayten Cantas ◽  
Metin Kurt ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Absorber Layer ◽  
Metallic Substrates

Cu(In,Ga)S2 absorber layer prepared for thin film solar cell by electrodeposition of Cu-Ga precursor from deep eutectic solvent

Solar Energy ◽  
2016 ◽  
Vol 139 ◽  
pp. 29-35 ◽  
Author(s):  
Zhou Cao ◽  
Sui Yang ◽  
Mang Wang ◽  
Xiaopan Huang ◽  
Hongxing Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Deep Eutectic Solvent ◽  
Absorber Layer
Sign in / Sign up

Export Citation Format

Share Document