Generation and characterization of highly vibrationally excited molecular beam

2006 ◽  
Vol 124 (5) ◽  
pp. 054301 ◽  
Author(s):  
Hsu-Chen Hsu ◽  
Jia-Jia Lyu ◽  
Chen-Lin Liu ◽  
Cheng-Liang Huang ◽  
Chi-Kung Ni
Keyword(s):  
Molecular Beam ◽  
Vibrationally Excited

In situ characterization of a cold and short pulsed molecular beam by femtosecond ion imaging

2009 ◽  
Vol 11 (20) ◽  
pp. 3958 ◽  
Author(s):  
Daniel Irimia ◽  
Rob Kortekaas ◽  
Maurice H. M. Janssen
Keyword(s):  
Molecular Beam ◽  
Ion Imaging ◽  
In Situ Characterization

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area

scholarly journals Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Gas Source

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

1989 ◽  
Vol 18 (6) ◽  
pp. 757-761
Author(s):  
E. T. Croke ◽  
R. J. Hauenstein ◽  
C. W. Nieh ◽  
T. C. McGill
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial
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