Effects of heavy boron doping on the valence band offset at the Si1−xGex∕Si interface and Si1−xGex band gap

2005 ◽  
Vol 87 (25) ◽  
pp. 252119 ◽  
Author(s):  
Jing Liu ◽  
Mehmet C. Ozturk
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Boron Doping ◽  
Band Offset ◽  
Valence Band Offset

Influence of Cu(In,Ga)Se2 band gap on the valence band offset with CdS

2004 ◽  
Vol 451-452 ◽  
pp. 420-423 ◽  
Author(s):  
T. Schulmeyer ◽  
R. Kniese ◽  
R. Hunger ◽  
W. Jaegermann ◽  
M. Powalla ◽  
...  
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Theoretical impacts of single band gap grading of perovskite and valence band offset of perovskite/hole transport layer interface on its solar cell performances

Solar Energy ◽  
2022 ◽  
Vol 231 ◽  
pp. 684-693
Author(s):  
Yu Kawano ◽  
Jakapan Chantana ◽  
Takayuki Negami ◽  
Takahito Nishimura ◽  
Abdurashid Mavlonov ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Valence Band ◽  
Hole Transport ◽  
Single Band ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Band Offset ◽  
Valence Band Offset ◽  
Layer Interface

Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs

2001 ◽  
Vol 89 (10) ◽  
pp. 5473-5477 ◽  
Author(s):  
R. Teissier ◽  
D. Sicault ◽  
J. C. Harmand ◽  
G. Ungaro ◽  
G. Le Roux ◽  
...  
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Band Offset ◽  
Temperature Dependent ◽  
Valence Band Offset

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

scholarly journals Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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