Step-induced uniaxial magnetic anisotropy of La0:67Sr0:33MnO3 thin films

2005 ◽  
Vol 87 (24) ◽  
pp. 242507 ◽  
Author(s):  
Mercy Mathews ◽  
Ferry M. Postma ◽  
J. Cock Lodder ◽  
R. Jansen ◽  
Guus Rijnders ◽  
...  
2009 ◽  
Vol 79 (1) ◽  
Author(s):  
D. Kirk ◽  
A. Kohn ◽  
K. B. Borisenko ◽  
C. Lang ◽  
J. Schmalhorst ◽  
...  

2014 ◽  
Vol 116 (13) ◽  
pp. 133904 ◽  
Author(s):  
Sougata Mallick ◽  
Subhankar Bedanta ◽  
Takeshi Seki ◽  
Koki Takanashi

1983 ◽  
Vol 43 (4) ◽  
pp. 389-390 ◽  
Author(s):  
H. Kobayashi ◽  
T. Ono ◽  
A. Tsushima ◽  
T. Suzuki

2012 ◽  
Vol 476-478 ◽  
pp. 2335-2338 ◽  
Author(s):  
Yuan Wang ◽  
Hao Geng ◽  
Shuang Jun Nie ◽  
Jian Qing Wei ◽  
Lai Sen Wang ◽  
...  

A series of [Fe80Ni20-O/ZnO]nmultilayer thin films with different ZnO separate layer thicknesses (t, from 0 to 3 nm) and fixed Fe80Ni20-O layer thickness (about 5 nm) have been fabricated on (100)-oriented silicon wafers and glass substrates by reactive magnetron sputtering. Microstructure analysis and static magnetic measurement results indicate that the magnetic properties of the films can be adjusted by the variation of ZnO monolayers thickness. All films reveal an evident in-plane uniaxial magnetic anisotropy (IPUMA). The values of in-plane uniaxial magnetic anisotropy fields (Hk) and resistivity (ρ) can be changed from 8 to 57 Oe and 62 to 168 μΩ•cm respectively with the t increasing. While the values of hard axis coercivity (Hch) and easy axis coercivity (Hce) reveal minimums of 1.5 and 3 Oe respectively at t = 1 nm.


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