Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature

2005 ◽  
Vol 87 (24) ◽  
pp. 242903 ◽  
Author(s):  
V. Ligatchev ◽  
Rusli ◽  
Zhao Pan
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Defect States ◽  
Density Of Defect States

ITO/a-SiNx:H/a-Si:H Photodiode with Enhanced Photosensitivity and Reduced Leakage Current Using Polycrystalline ITO Deposited at Room Temperature

2000 ◽  
Vol 609 ◽  
Author(s):  
S. Tao ◽  
Q. Ma ◽  
D. Striakhilev ◽  
A. Nathan
Keyword(s):  
Leakage Current ◽  
Dark Current ◽  
Room Temperature ◽  
Dynamic Range ◽  
Transport Model ◽  
Measurement Data ◽  
Mis Structure ◽  
Defect States ◽  
Large Area ◽  
Density Of Defect States

ABSTRACTWe report an ITO/a-SiNx:H/a-Si:H MIS photodiode structure based on room temperature deposition of optically transparent polycrystalline ITO for applications in large area optical and x-ray imaging. The photodiode structure exhibits device characteristics with reduced leakage current and enhanced photosensitivity giving rise to a hundred-fold improvement in dynamic range. This notable improvement in performance is believed to be due to the reduced diffusion of oxygen from the ITO to the a-Si:H layer, and thus reducing the density of defect states inside the a-Si:H layer. The behavior of photo and dark current is consistent with an elaborate transport model for the Schottky barrier. The model agrees reasonably well with measurement data for the dark current and provides a consistent picture in terms of the photo current behavior in the MIS structure, where the insulating layer serves to reduce the oxygen diffusion.

Formation and High Frequency CV-Measurements of Aluminum / Aluminum Nitride / 6H Silicon Carbide Structures

1996 ◽  
Vol 423 ◽  
Author(s):  
C. -M. Zetterling ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
C. I. Harris ◽  
S. S. Wong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
High Frequency ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Relative Dielectric Constant ◽  
Thickness Measurement ◽  
Organic Chemical ◽  
Hydrogen Carrier

AbstractUndoped single crystalline aluminum nitride films were grown by metal organic chemical vapor deposition (MOCVD) at 1200 °C. The precursors used were trimethylaluminium (TMA) and ammonia (NH3) in a hydrogen carrier flow, at a pressure of 10 Torr. Silicon carbide substrates of the 4H or the 6H polytype with an epilayer on the silicon face, were used to grow the 200 nm thick A1N films. Aluminum was evaporated and subsequently patterned to form MIS capacitors for high frequency (400 kHz) capacitance voltage measurements at room temperature. It was possible to measure the structure and characterize accumulation, depletion and deep depletion. However, it was not possible to invert the low doped SiC epilayer at room temperature. From an independent optical thickness measurement the relative dielectric constant of aluminum nitride was calculated to be 8.4. The films were stressed up to 50 Volts (2.5 MV/cm) without breakdown or excessive leakage currents. These results indicate the possibility to replace silicon dioxide with aluminum nitride in SiC field effect transistors.

ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A-Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) THIN FILMS

2013 ◽  
Vol 22 ◽  
pp. 439-451
Author(s):  
AMBIKA SHARMA ◽  
KUMARI ANSHU ◽  
PREETI YADAV
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Life Time ◽  
Defect States ◽  
Temperature Dependent ◽  
Photoelectrical Properties ◽  
Glassy Alloys ◽  
Localized State ◽  
Evaporation Technique ◽  
Density Of Defect States

Bulk samples of Te-rich Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) glassy alloys are prepared by melt quenching technique. The thin films of the bulk samples are deposited by using vacuum evaporation technique for their electrical and photoelectrical measurements. Keithley 6487 picoammeter has been used to study the electrical and photoelectrical characteristics of Ge20Te80-XBix thin films kept in vacuum. Temperature dependent dark and photoconductivity is studied in the temperature range 300-360 K and voltage V = 80V. Photoconductivity with intensity at room temperature follows a power law where power γ lies near to 0.5, suggesting that the recombination is bimolecular in nature. The density of defect states and photosensitivity are found to follow an opposite trend with each other. The differential life time is determined from the rise and decay of photocurrent w.r.t. time. The dispersion parameter and localized state distribution parameter are estimated from decay curves and reported for the studied composition.

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ-MnO2-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Epitaxial Graphene

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

Synthesis of Aluminum Nitride-Silicon Carbide Solid Solutions by Combustion Nitridation

2004 ◽  
Vol 83 (5) ◽  
pp. 1108-1112 ◽  
Author(s):  
Manshi Ohyanagi ◽  
Kenshiro Shirai ◽  
Nadejda Balandina ◽  
Masaaki Hisa ◽  
Zuhair A. Munir
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Solid Solutions

Prediction of the Strength of Ceramic Tubular Components: Part II — Experimental Verification

1991 ◽  
Author(s):  
D. L. Shelleman ◽  
O. M. Jadaan ◽  
J. C. Conway ◽  
J. J. Mecholsky
Keyword(s):  
Silicon Carbide ◽  
Statistical Theory ◽  
Room Temperature ◽  
Strength Distribution ◽  
Ring Test ◽  
Stress Distributions ◽  
Pressure Test ◽  
Tubular Components ◽  
Tubular Specimens ◽  
Strength Distributions

Abstract The strength distribution of reaction bonded silicon carbide tubes that failed by internal pressurization was predicted from strength distributions obtained from simple laboratory test specimens at room temperature. The strength distributions of flexure bars, C-rings tested in tension, C-rings tested in compression, diametrally compressed O-rings, and internally pressurized short tubes were compared to the strength distribution of internally pressurized long tubes. The methodology involved application of Weibull statistical theory using elasticity theory to define the stress distributions in the simple specimens. The flexural specimens did not yield acceptable results, since they were ground prior to testing, thereby altering their flaw population in comparison with the processing induced flaw populations of the tubular specimens. However, the short tube internal pressure test, the c-ring tested in tension and the diametrally compressed o-ring test configurations yielded accurate predictions, since these specimens more accurately represent the strength limiting flaw population in the long tubes.

scholarly journals Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

Materials ◽  
2017 ◽  
Vol 10 (11) ◽  
pp. 1266 ◽  
Author(s):  
Chengkun Ma ◽  
Hailong Chen ◽  
Chao Wang ◽  
Jifeng Zhang ◽  
Hui Qi ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Inorganic Phosphate ◽  
Room Temperature ◽  
Ultrahigh Temperature

scholarly journals Aluminum nitride doped with transition metal group atoms as a material for spintronics

2020 ◽  
pp. 162-172
Author(s):  
S.S. Khludkov ◽  
◽  
I.A. Prudaev ◽  
L.O. Root ◽  
O.P. Tolbanov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Scientific Literature ◽  
Material Growth ◽  
Metal Group

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

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