Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy
2001 ◽
Vol 66
(1-2)
◽
pp. 3-51
◽
1992 ◽
Vol 10
(6)
◽
pp. 3112
◽
1998 ◽
Vol 81
(22)
◽
pp. 4963-4966
◽