Effect of surface bond-order loss on the dc conductance of a metallic nanosolid

2005 ◽  
Vol 98 (10) ◽  
pp. 104308 ◽  
Author(s):  
T. C. Au Yeung ◽  
Chang Q. Sun ◽  
T. C. Chiam ◽  
R. Ramanathan ◽  
W. Z. Shangguan ◽  
...  
Keyword(s):  
Bond Order ◽  
Surface Bond ◽  
Effect Of Surface

Effect of surface bond-order loss on the electronic thermal conductivity of metallic polycrystalline films

2005 ◽  
Vol 98 (11) ◽  
pp. 113707 ◽  
Author(s):  
T. C. Au Yeung ◽  
T. C. Chiam ◽  
Chang Q. Sun ◽  
Mingxia Gu ◽  
W. Z. Shangguan ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Bond Order ◽  
Polycrystalline Films ◽  
Electronic Thermal Conductivity ◽  
Surface Bond ◽  
Effect Of Surface

Effect of surface bond-order loss on electrical resistivity of metallic polycrystalline thin films

2005 ◽  
Vol 72 (15) ◽  
Author(s):  
T. C. Au Yeung ◽  
T. C. Chiam ◽  
C. K. Chen ◽  
C. Q. Sun ◽  
W. Z. Shangguan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Bond Order ◽  
Polycrystalline Thin Films ◽  
Surface Bond ◽  
Effect Of Surface

Impact of surface bond-order loss on phonon dispersion relations and thermal conductivity of cylindrical Si nanowires

2006 ◽  
Vol 74 (15) ◽  
Author(s):  
T. C. Au Yeung ◽  
M. X. Gu ◽  
Chang Q. Sun ◽  
George C. K. Chen ◽  
D. W. K. Wong ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Bond Order ◽  
Phonon Dispersion ◽  
Dispersion Relations ◽  
Si Nanowires ◽  
Surface Bond ◽  
Phonon Dispersion Relations

The effect of surface bond reconstruction of thermal contact surfaces on phonon transport in atomic wire

2009 ◽  
Vol 106 (5) ◽  
pp. 054312 ◽  
Author(s):  
Jing Li ◽  
T. C. Au Yeung ◽  
C. H. Kam ◽  
Xuean Zhao ◽  
Qing-Hu Chen ◽  
...  
Keyword(s):  
Thermal Contact ◽  
Phonon Transport ◽  
Contact Surfaces ◽  
Surface Bond ◽  
Effect Of Surface

Ultra-low thermal conductivity of roughened silicon nanowires: Role of phonon-surface bond order imperfection scattering

2020 ◽  
Vol 29 (8) ◽  
pp. 086502
Author(s):  
Heng-Yu Yang ◽  
Ya-Li Chen ◽  
Wu-Xing Zhou ◽  
Guo-Feng Xie ◽  
Ning Xu
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nanowires ◽  
Bond Order ◽  
Low Thermal Conductivity ◽  
Surface Bond

Radiation-induced surface decomposition

1983 ◽  
Vol 41 ◽  
pp. 368-369
Author(s):  
M. L. Knotek
Keyword(s):  
Ionizing Radiation ◽  
Atomic Structure ◽  
Chemical Bonding ◽  
Neutral Species ◽  
Radiation Induced ◽  
Physical And Chemical ◽  
Surface Decomposition ◽  
The Relationship ◽  
Electron And Photon ◽  
Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

EFFECT OF SURFACE CONDITIONS ON COERCIVITIES FOR Nd-Fe-B MAGNETS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-641-C8-642
Author(s):  
Y. Otani ◽  
H. Miyajima ◽  
S. Chikazumi ◽  
S. Hirosawa ◽  
M. Sagawa
Keyword(s):  
Surface Conditions ◽  
Effect Of Surface
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