Observation of Fine Particle Charges irradiated by UV-Light and Electron Beam

2005 ◽  
Author(s):  
Ayumi Ando
Keyword(s):  
2015 ◽  
Vol 135 (9) ◽  
pp. 1049-1054
Author(s):  
Norio Ichikawa ◽  
Kohei Ikeda ◽  
Yoshinori Honda ◽  
Hiroyuki Taketomi ◽  
Koji Kawai ◽  
...  

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 646
Author(s):  
Peng Jiang ◽  
Zhipeng Li ◽  
Wei Lu ◽  
Yi Ma ◽  
Wenhuai Tian

Developing rare-earth doped oxysulfide phosphors with diverse morphologies has significant value in many research fields such as in displays, medical diagnosis, and information storage. All of the time, phosphors with spherical morphology have been developed in most of the related literatures. Herein, by simply adjusting the pH values of the reaction solution, Gd2O2S:Tb3+ phosphors with various morphologies (sphere-like, sheet-like, cuboid-like, flat square-like, rod-like) were synthesized. The XRD patterns showed that phosphors with all morphologies are pure hexagonal phase of Gd2O2S. The atomic resolution structural analysis by transmission electron microscopy revealed the crystal growth model of the phosphors with different morphology. With the morphological change, the band gap energy of Gd2O2S:Tb3+ crystal changed from 3.76 eV to 4.28 eV, followed by different luminescence performance. The samples with sphere-like and cuboid-like microstructures exhibit stronger cathodoluminescence intensity than commercial product by comparison. Moreover, luminescence of Gd2O2S:Tb3+ phosphors have different emission performance excited by UV light radiation and an electron beam, which when excited by UV light is biased towards yellow, and while excited by an electron beam is biased towards cyan. This finding provides a simple but effective method to achieve rare-earth doped oxysulfide phosphors with diversified and tunable luminescence properties through morphology control.


1973 ◽  
Vol 10 (6) ◽  
pp. 941-943 ◽  
Author(s):  
Koichi Toyoda ◽  
Susumu Namba ◽  
Toshiaki Matsui ◽  
Yoshio Suge
Keyword(s):  
Uv Light ◽  

2000 ◽  
Vol 5 (S1) ◽  
pp. 654-660 ◽  
Author(s):  
H. Klausing ◽  
J. Aderhold ◽  
F. Fedler ◽  
D. Mistele ◽  
J. Stemmer ◽  
...  

Electron beam pumped surface emitting lasers are of great interest for a variety of applications, such as Laser Cathode Ray Tubes (LCRT) in projection display technology or high power UV light sources for photolithography.Two distributed Bragg reflector (DBR) samples were grown by plasma assisted molecular beam epitaxy (PAMBE). The active regions of the samples are a GaN:Si bulk layer and a multihetero (MH) structure, respectively.Also, a separately grown single DBR stack was studied to find optical transmission and reflection properties which were compared to transfer matrix simulations.


1999 ◽  
Vol 595 ◽  
Author(s):  
H. Klausing ◽  
J. Aderhold ◽  
F. Fedler ◽  
D. Mistele ◽  
J. Stemmer ◽  
...  

AbstractElectron beam pumped surface emitting lasers are of great interest for a variety of applications, such as Laser Cathode Ray Tubes (LCRT) in projection display technology or high power UV light sources for photolithography.Two distributed Bragg reflector (DBR) samples were grown by plasma assisted molecular beam epitaxy (PAMBE). The active regions of the samples are a GaN:Si bulk layer and a multihetero (MH) structure, respectively.Also, a separately grown single DBR stack was studied to find optical transmission and reflection properties which were compared to transfer matrix simulations.Scanning electron beam pumping at 80 K with an excitation energy of 40 keV at varying beam currents revealed luminescence emission maxima located at about 3.45 eV for the sample with the MH structure active region. Optical modes appeared for excitation powers greater than 0.85 MW/ cm2. Further increasing the excitation power density the number of modes increased and a broadening and redshift of the luminescence spectrum could be observed.Based on our experimental results, we discuss the dependence of optical parameters of the nitride vertical cavity and sample surface reactions on primary electron beam power.


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