Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

2005 ◽  
Vol 87 (20) ◽  
pp. 203101 ◽  
Author(s):  
J. C. Harmand ◽  
G. Patriarche ◽  
N. Péré-Laperne ◽  
M-N. Mérat-Combes ◽  
L. Travers ◽  
...  
Keyword(s):  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Gaas Nanowire ◽  
Vapor Liquid

scholarly journals PULSE GROWTH OF THE GAAS NANOWIRES

2021 ◽  
Author(s):  
Alla Nastovjak ◽  
David Shterental ◽  
Nataliya Shwartz
Keyword(s):  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Gaas Nanowire ◽  
Vapor Liquid

The results of the simulation of the GaAs nanowire self-catalyzed growth via vapor-liquid-solid mechanism using various pulse modes are presented in this work.

A New Understanding of the Vapor–Liquid–Solid Mechanism of Nanowire Growth

2020 ◽  
Vol 56 (4) ◽  
pp. 346-352
Author(s):  
V. A. Nebol’sin ◽  
A. Yu. Vorob’ev ◽  
N. Swaikat
Keyword(s):  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Sign in / Sign up

Export Citation Format

Share Document