STM Images of Atomic-Scale Carbon Nanotube Defects Produced by Ar+ Irradiation

Author(s):  
Z. Osváth
2005 ◽  
Vol 72 (4) ◽  
Author(s):  
Z. Osváth ◽  
G. Vértesy ◽  
L. Tapasztó ◽  
F. Wéber ◽  
Z. E. Horváth ◽  
...  

Author(s):  
Mircea Fotino ◽  
D.C. Parks

In the last few years scanning tunneling microscopy (STM) has made it possible and easily accessible to visualize surfaces of conducting specimens at the atomic scale. Such performance allows the detailed characterization of surface morphology in an increasing spectrum of applications in a wide variety of fields. Because the basic imaging process in STM differs fundamentally from its equivalent in other well-established microscopies, good understanding of the imaging mechanism in STM enables one to grasp the correct information content in STM images. It thus appears appropriate to explore by STM the structure of amorphous carbon films because they are used in many applications, in particular in the investigation of delicate biological specimens that may be altered through the preparation procedures.All STM images in the present study were obtained with the commercial instrument Nanoscope II (Digital Instruments, Inc., Santa Barbara, California). Since the importance of the scanning tip for image optimization and artifact reduction cannot be sufficiently emphasized, as stressed by early analyses of STM image formation, great attention has been directed toward adopting the most satisfactory tip geometry. The tips used here consisted either of mechanically sheared Pt/Ir wire (90:10, 0.010" diameter) or of etched W wire (0.030" diameter). The latter were eventually preferred after a two-step procedure for etching in NaOH was found to produce routinely tips with one or more short whiskers that are essentially rigid, uniform and sharp (Fig. 1) . Under these circumstances, atomic-resolution images of cleaved highly-ordered pyro-lytic graphite (HOPG) were reproducibly and readily attained as a standard criterion for easily recognizable and satisfactory performance (Fig. 2).


Nano Letters ◽  
2009 ◽  
Vol 9 (11) ◽  
pp. 3810-3815 ◽  
Author(s):  
Hideto Yoshida ◽  
Takuma Shimizu ◽  
Tetsuya Uchiyama ◽  
Hideo Kohno ◽  
Yoshikazu Homma ◽  
...  

1995 ◽  
Vol 399 ◽  
Author(s):  
P. E. Quesenberry ◽  
P. N. First

ABSTRACTIsland size distributions have been derived from scanning tunneling microscope (STM) images of Ni deposited on cleaved GaAs(110) at room temperature and above. For submonolayer coverages, this system forms 3-dimensional (3-D) reacted islands with the degree of reaction dependent upon the growth temperature. As has been found for other systems, the average island size (sαυ) increases with temperature. The high temperature data (∼ 150° C) shows two distinct island types, each with substantially different average size. The island size distributions have maxima at the smallest island sizes. For different coverages, plots of the area-normalized island size distributions versus the scaled variable s/sαυ show significant differences. However, above a cutoff value for s/sαυ the distributions can be renormalized to fall on a common curve. These characteristics and direct atomic-scale evidence are consistent with nucleation of islands via adatom-substrate exchange, but the temperature dependence of the total island density appears to be inconsistent with this being the only first-order rate process taking place.


2016 ◽  
Vol 120 (20) ◽  
pp. 11268-11276 ◽  
Author(s):  
Mijin Kim ◽  
Lyudmyla Adamska ◽  
Nicolai F. Hartmann ◽  
Hyejin Kwon ◽  
Jin Liu ◽  
...  

2004 ◽  
Vol 858 ◽  
Author(s):  
Yongqiang Xue

ABSTRACTWe present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotubes in contact with metal electrodes at different contact geometries. We analyze the Schottky barrier effect at the metal-nanotube interface by examining the electrostatics, the band line up and the conductance of the metal-nanotube wire-metal junction as a function of the nanotube channel length, which leads to an effective decoupling of interface and bulk effects in electron transport through nanotube junction devices.


Carbon ◽  
2017 ◽  
Vol 115 ◽  
pp. 402-408 ◽  
Author(s):  
Yingchao Yang ◽  
Cristina Ramirez ◽  
Xing Wang ◽  
Zhixing Guo ◽  
Anton Tokranov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document