Room temperature continuous wave operation of a heterojunction bipolar transistor laser

2005 ◽  
Vol 87 (13) ◽  
pp. 131103 ◽  
Author(s):  
M. Feng ◽  
N. Holonyak ◽  
G. Walter ◽  
R. Chan
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Transistor Laser ◽  
Continuous Wave Operation

Room-temperature continuous-wave operation of a 1.3-μm npn-AlGaInAs/InP transistor laser

2012 ◽  
Author(s):  
Noriaki Sato ◽  
Mizuki Shirao ◽  
Takashi Sato ◽  
Masashi Yukinari ◽  
Nobuhiko Nishiyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Transistor Laser ◽  
Continuous Wave Operation

Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-$\mu{\rm m}$ Wavelength

2013 ◽  
Vol 25 (8) ◽  
pp. 728-730 ◽  
Author(s):  
Noriaki Sato ◽  
Mizuki Shirao ◽  
Takashi Sato ◽  
Masashi Yukinari ◽  
Nobuhiko Nishiyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Transistor Laser ◽  
Continuous Wave Operation

Room-Temperature Continuous-Wave Operation of 1.3-µm Transistor Laser with AlGaInAs/InP Quantum Wells

2011 ◽  
Vol 4 (7) ◽  
pp. 072101 ◽  
Author(s):  
Mizuki Shirao ◽  
Takashi Sato ◽  
Yuta Takino ◽  
Noriaki Sato ◽  
Nobuhiko Nishiyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Continuous Wave ◽  
Transistor Laser ◽  
Continuous Wave Operation

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

Numerical analysis of distortion characteristics of heterojunction bipolar transistor laser

2015 ◽  
Vol 357 ◽  
pp. 177-184 ◽  
Author(s):  
S. Piramasubramanian ◽  
M. Ganesh Madhan ◽  
Jyothsna Nagella ◽  
G. Dhanapriya
Keyword(s):  
Numerical Analysis ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Transistor Laser

Room temperature continuous wave operation of λ ∼ 3–3.2 μm quantum cascade lasers

2012 ◽  
Vol 101 (24) ◽  
pp. 241110 ◽  
Author(s):  
N. Bandyopadhyay ◽  
Y. Bai ◽  
S. Tsao ◽  
S. Nida ◽  
S. Slivken ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
Continuous Wave Operation ◽  
Cascade Lasers

8.5 W room temperature continuous wave operation of a Ho:LuAG laser

2009 ◽  
Vol 6 (12) ◽  
pp. 847-849 ◽  
Author(s):  
X.M. Duan ◽  
B.Q. Yao ◽  
Y.L. Ju ◽  
Y.Z. Wang ◽  
G.J. Zhao
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Continuous Wave Operation
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