Electrical transport characteristics of single-layer organic devices from theory and experiment

2005 ◽  
Vol 98 (6) ◽  
pp. 063709 ◽  
Author(s):  
S. J. Martin ◽  
Alison B. Walker ◽  
A. J. Campbell ◽  
D. D. C. Bradley
Keyword(s):  
Electrical Transport ◽  
Single Layer ◽  
Organic Devices ◽  
Theory And Experiment

scholarly journals Electrical Transport Properties of Single-Layer WS2

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 8174-8181 ◽  
Author(s):  
Dmitry Ovchinnikov ◽  
Adrien Allain ◽  
Ying-Sheng Huang ◽  
Dumitru Dumcenco ◽  
Andras Kis
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Single Layer ◽  
Electrical Transport Properties

Two-layer Model for Electroabsorption and Built-in Potential Measurements on a-Si:H pin Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
Lin Jiang ◽  
E. A. Schiff
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Second Harmonic ◽  
Semiconductor Devices ◽  
Single Layer ◽  
Experimental Results ◽  
Layer Model ◽  
Two Layer Model ◽  
Organic Devices

AbstractModulated Electroabsorption (EA) measurements have been widely used to estimate built-in potentials (Vbi) in semiconductor devices. The method is particularly simple in devices for which the built-in potential is dropped in a single layer of the device. However, experimental results in amorphous silicon and organic devices can involve at least 2 layers. In the present paper we consider the information which can be obtained about 2-layer semiconductor devices from electroabsorption measurements. In particular we describe a 2-layer EA model appropriate to a-Si:H based pin solar cells, for which both the p+ and i layers contribute to the EA signal. We present an analysis of capacitance and second harmonic measurements which yields the EA coefficient for the p+ layer of the device, and we present measurements on a-Si:H pin devices which appear consistent with this analysis. Wavelength dependent EA then yields the built-in potential across the 2-layer device.

Equilibrium Crystal Shape of Silicon Near (001)

1992 ◽  
Vol 280 ◽  
Author(s):  
J. Tersoff ◽  
E. Pehlke
Keyword(s):  
Elevated Temperature ◽  
Double Layer ◽  
Equilibrium Shape ◽  
Silicon Crystal ◽  
Single Layer ◽  
Crystal Shape ◽  
Apparent Discrepancy ◽  
Stepped Surfaces ◽  
Topographic Features ◽  
Theory And Experiment

We have calculated the equilibrium shape of a silicon crystal at orientations near (001), both at T=0 and at elevated temperature [1], using methods developed previously to study stepped surfaces [2,3,4]. Comparison with recent experiments shows that several topographic features observed on Si direcdy reflect the equilibrium shape. In particular, our results resolve an apparent discrepancy between theory and experiment, regarding facetting between regions of single-layer and double-layer steps. In addition, the calculated crystal shape suggests an explanation for observed low-angle facetting on very flat (001) surfaces.

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