Growth kinetics of core-shell-structured grains and dielectric constant in rare-earth-doped BaTiO3 ceramics

2005 ◽  
Vol 98 (4) ◽  
pp. 044105 ◽  
Author(s):  
Gang Liu ◽  
Xiao-hui Wang ◽  
Y. Lin ◽  
L.-T. Li ◽  
Ce-Wen Nan
2013 ◽  
Vol 24 (49) ◽  
pp. 495704 ◽  
Author(s):  
S Derom ◽  
A Berthelot ◽  
A Pillonnet ◽  
O Benamara ◽  
A M Jurdyc ◽  
...  

2020 ◽  
Vol 124 (39) ◽  
pp. 21717-21721
Author(s):  
Cyrille Hamon ◽  
Doru Constantin

2018 ◽  
Vol 101 ◽  
pp. 61-66 ◽  
Author(s):  
Haili Jiang ◽  
Zisong Sun ◽  
Zhihai Liu ◽  
Peng Cheng ◽  
Xuejun Liu ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (27) ◽  
pp. 12935-12956 ◽  
Author(s):  
Lucía Labrador-Páez ◽  
Erving C. Ximendes ◽  
Paloma Rodríguez-Sevilla ◽  
Dirk H. Ortgies ◽  
Ueslen Rocha ◽  
...  

The current status of the use of core–shell rare-earth-doped nanoparticles in biomedical applications is reviewed highlighting the most relevant advances.


1994 ◽  
Vol 346 ◽  
Author(s):  
G. Teowee ◽  
C.D. Baertlein ◽  
S.A. Schlegel ◽  
J.M. Boulton ◽  
D.R. Uhlmann

ABSTRACTFerroelectric (FE) films, especially PZT films, have received increasing attention for microelectronics applications such as FE memory and in high density DRAM's. While rare earth doped PbTiO3 ceramics has been studied for SAW and piezoelectric applications, rare earth-doped films seldom have been systematically explored. A series of sol-gel derived PbTiO3 films with varying amounts (5-15 mole %) of rare earths (such as, Nd, Sm, Tb, Dy, Er ,Yb and La ) have been prepared using acetates and alkoxides as precursors. The solutions were spin coated onto platinized Si wafers. The effects of the type and amount of rare incorporation on the phase assembly and microstructure have been quantified. The results of dielectric characterization (e.g., dielectric constant, dissipation factor and leakage currents) and FE behaviors (viz remanent polarization, and coercive field) are presented; these films exhibited low leakage currents (3E-10 A/cm2) and much higher dielectric constant (up to 525) compared to undoped PbTiO3 films.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


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