scholarly journals Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

2005 ◽  
Vol 87 (7) ◽  
pp. 071102 ◽  
Author(s):  
Koichi Okamoto ◽  
Isamu Niki ◽  
Axel Scherer ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spontaneous Emission ◽  
Surface Plasmon ◽  
Emission Rate ◽  
Photoluminescence Spectroscopy ◽  
Spontaneous Emission Rate ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Spontaneous Emission Rate and Radiative Current Density in p-GaAs/i-GaNAsBi/n-GaAs Quantum Well Lasers

2019 ◽  
Vol 16 (11) ◽  
pp. 4474-4478
Author(s):  
Ikram Hassouna Guizani ◽  
Ahmed Alhadi Rebey
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spontaneous Emission ◽  
Current Density ◽  
Stark Effect ◽  
Emission Rate ◽  
Spontaneous Emission Rate ◽  
Doping Density ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect

We have theoretically investigated the 1.55 μm emission of p–i–n GaNAsBi-based quantum wells (QWs) using a self-consistent calculation combined with (16×16) BAC model. Their performances are evaluated in terms of spontaneous emission rate Rsp and radiative current density Jrad. We have found that Jrad increases as function of the injected carrier density as well as the doping density. The quantum confined Stark effect on radiative current density in ideal lasers is also discussed. The radiative current density versus well width for simple and double p-GaAs/i-GaN·58yAs1-1·58yBiy/n-GaAs quantum well structures is also examined. We have obtained that Jrad increases with increase average thickness of GaNAsBi active region. The optimization of well parameters can be used as a basis for GaNAsBi-based lasers intended for optical fiber telecommunication wavelength.

Control of Spontaneous Emission from Colloidal Quantum Dots in a Polymer Microcavity

2006 ◽  
Vol 959 ◽  
Author(s):  
Vinod Menon ◽  
Nikesh Valappil ◽  
Iosef Zeylikovich ◽  
Taposh Gayen ◽  
Bidyut Das ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spontaneous Emission ◽  
Defect Layer ◽  
Bragg Reflectors ◽  
Spontaneous Emission Rate ◽  
Time Resolved ◽  
One Dimensional ◽  
The One ◽  
Time Resolved Photoluminescence ◽  
Temperature Time

ABSTRACTWe report the fabrication of a one dimensional microcavity structure embedded with colloidal CdSe/ZnS core/shell quantum dots using solution processing. The microcavity structures were fabricated by spin coating alternating layers of polymers of different refractive indices (poly-vinylcarbazole, and poly-acrylic acid) to form the distributed Bragg reflectors (DBRs). Greater than 90% reflectivity was obtained using ten periods of the structure. The one dimensional microcavity was formed by sandwiching a λ/n thick defect layer between two such DBRs. The microcavity demonstrated directionality in emission and well behaved dispersion characteristics. Room temperature time-resolved photoluminescence measurements carried out on this structure showed six fold enhancement of spontaneous emission rate. The photoluminescence decay time of the quantum dots was found to be ∼ 1 ns while for the quantum dots embedded in the microcavity it was ∼150 ps.

Localization of Excitons in AlGaAs/GaAs Quantum Wells Observed in the Time Resolved Photoluminescence Spectroscopy

1993 ◽  
Author(s):  
Yutaka Takahashi ◽  
Koji Muraki ◽  
Susumu Fukatsu ◽  
Satoru S. Kano ◽  
Yasuhiro Shiraki ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Temperature enhanced spontaneous emission rate spectra in GeSn/Ge quantum wells

2017 ◽  
Vol 7 (3) ◽  
pp. 800 ◽  
Author(s):  
L. Qian ◽  
W. J. Fan ◽  
C. S. Tan ◽  
D. H. Zhang
Keyword(s):  
Quantum Wells ◽  
Spontaneous Emission ◽  
Emission Rate ◽  
Spontaneous Emission Rate
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