High-efficiency photovoltaic devices based on annealed poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1- phenyl-(6,6)C61 blends

2005 ◽  
Vol 87 (8) ◽  
pp. 083506 ◽  
Author(s):  
Marisol Reyes-Reyes ◽  
Kyungkon Kim ◽  
David L. Carroll
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices

HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-463-C4-466
Author(s):  
A. Madan ◽  
W. Czubatyj ◽  
J. Yang ◽  
J. McGill ◽  
S. R. Ovshinsky
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Amorphous Si

Stable and near-omni-directional high-efficiency amorphous Si photovoltaic devices

2011 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Jia-Min Shieh ◽  
Chang-Hong Shen ◽  
Jung Y. Huang ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices ◽  
Amorphous Si

II-VI Material Integration With Silicon for Detector and PV Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3391-3402 ◽  
Author(s):  
T.A. Gessert ◽  
E. Colegrove ◽  
B. Stafford ◽  
R. Kodama ◽  
Wei Gao ◽  
...  
Keyword(s):  
Growth Process ◽  
High Efficiency ◽  
Photovoltaic Devices ◽  
Heteroepitaxial Growth ◽  
Ir Detector ◽  
Ir Detectors ◽  
Growth Environment ◽  
Si Substrates ◽  
Conversion Efficiencies

ABSTRACTHeteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ∼17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.

Synthesis and Application of Ferroelectric P(VDF-TrFE) Nanoparticles in Organic Photovoltaic Devices for High Efficiency

2013 ◽  
Vol 3 (12) ◽  
pp. 1581-1588 ◽  
Author(s):  
Zhengguo Xiao ◽  
Qingfeng Dong ◽  
Pankaj Sharma ◽  
Yongbo Yuan ◽  
Baodong Mao ◽  
...  
Keyword(s):  
High Efficiency ◽  
Organic Photovoltaic ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices

scholarly journals High-efficiency, broad-band and wide-angle optical absorption in ultra-thin organic photovoltaic devices

2014 ◽  
Vol 22 (S2) ◽  
pp. A376 ◽  
Author(s):  
Wenyan Wang ◽  
Yuying Hao ◽  
Yanxia Cui ◽  
Ximin Tian ◽  
Ye Zhang ◽  
...  
Keyword(s):  
Optical Absorption ◽  
High Efficiency ◽  
Broad Band ◽  
Organic Photovoltaic ◽  
Wide Angle ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices

scholarly journals Improving Absorption in Single Silicon Nanowires by Symmetry-breaking Design from Square to Rectangular Cross-section

2021 ◽  
Author(s):  
Wenfu Liu
Keyword(s):  
Symmetry Breaking ◽  
Silicon Nanowires ◽  
Light Absorption ◽  
High Efficiency ◽  
Rectangular Cross Section ◽  
Photovoltaic Devices ◽  
Vertical Side ◽  
Photovoltaic Applications ◽  
Single Nanowires ◽  
Horizontal Side

Light absorption in single nanowires (NWs) is one of the most crucial factors for photovoltaic applications. In this paper, we carried out a detailed investigation of light absorption in single rectangular NWs (RNWs). We show that the RNWs exhibit improved light absorption compared with the square NWs (SNWs), which can be attributed to the symmetry-breaking structure that can increase the light path length by increasing the vertical side and the enhanced leaky mode resonances (LMRs) by decreasing the horizontal side. We found that the light absorption in silicon RNWs can be enhanced by engineering the horizontal and vertical sides, the photocurrent is significantly increased by 276.5% or 82.9% compared with that of the SNWs with the same side length as the horizontal side of 100 nm or the vertical side of 1000 nm, respectively. This work provides an effective way for designing high-efficiency single NW photovoltaic devices based on the symmetry breaking from the SNWs to RNWs.

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