Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

2005 ◽  
Vol 87 (5) ◽  
pp. 052902 ◽  
Author(s):  
Yidong Xia ◽  
Jinbo Cheng ◽  
Bai Pan ◽  
Di Wu ◽  
Xiangkang Meng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Applied Electric Field ◽  
Tunable Properties

Shape of piezoelectric hysteresis loop for non-ferroelastic switching

2003 ◽  
Vol 784 ◽  
Author(s):  
A. K. Tagantsev ◽  
P. Muralt ◽  
J. Fousek
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Piezoelectric Coefficient ◽  
Hysteresis Loops ◽  
Simple Theory ◽  
The Difference

ABSTRACTA simple theory for the shape of the piezoelectric hysteresis loops (piezoelectric coefficient d vs. applied electric field E) is developed for the case of non-ferroelelastic 180° switching in ferroelectrics. The theory provides explanations for specific features of piezoelectric hysteresis loops, which have been observed in single crystals, thin films and in ceramics in particular. The piezoelectric coefficient may show a “hump”, i.e. when E decreases from the tip of the loop down to zero, d passes through a maximum, and a “nose”, i.e. a self-crossing of the loop close to its tips. The theory also explains the difference in the coercive fields seen in the polarization and piezoelectric loops.

Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films

2007 ◽  
Vol 90 (16) ◽  
pp. 162905 ◽  
Author(s):  
Kwang-Hwan Cho ◽  
Chil-Hyoung Lee ◽  
Chong-Yun Kang ◽  
Seok-Jin Yoon ◽  
Young-Pak Lee
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Applied Electric Field ◽  
Microwave Properties ◽  
Field Annealing

Properties of Amorphous and Crystalline Ta2O5 Thin Films Prepared by Metalorganic Solution Deposition Technique for Integrated Electronic Devices

2000 ◽  
Vol 623 ◽  
Author(s):  
P.C. Joshi ◽  
M.W. Cole
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electric Field ◽  
Applied Electric Field ◽  
Annealing Temperature ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Temperature Range ◽  
Si Substrates ◽  
Bias Stability

AbstractWe report on the properties of Ta2O5 thin films prepared by the metalorganic solution deposition (MOSD) technique on Pt-coated Si, n+-Si, and poly-Si substrates. The effects of postdeposition annealing temperature on the structural, electrical, and optical properties were analyzed. The electrical measurements were conducted on MIM and MIS capacitors. The dielectric constant of amorphous Ta2O5 thin films was in the range 29.2-29.5 up to 600°C, while crystalline thin films, annealed in the temperature range 650–750°C, exhibited enhanced dielectric constant in the range 45.6–51.7. The dielectric loss factor did not show any appreciable dependence on the annealing temperature and was in the range 0.006–0.009. The films exhibited high resistivities of the order of 1012–1015 Δ-cm at an applied electric field of 1 MV/cm in the annealing temperature range of 500-750 °C. The temperature coefficient of capacitance was in the range 52-114 ppm/°C for films annealed in the temperature range 500-750°C. The bias stability of capacitance, measured at an applied electric field of 1 MV/cm, was better than 1.41 % for Ta2O5 films annealed up to 750°C.

Effect of in situ applied electric field on the growth of La2Ti2O7 thin films by chemical solution deposition

2004 ◽  
Vol 268 (1-2) ◽  
pp. 198-203 ◽  
Author(s):  
Ai-Dong Li ◽  
Yi-Jun Wang ◽  
Su Huang ◽  
Jin-Bo Cheng ◽  
Di Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Applied Electric Field ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition

The effect of the applied electric field on laser-induced damage of dielectric thin films

2017 ◽  
Vol 4 (1) ◽  
pp. 016403
Author(s):  
Shenjiang Wu ◽  
Junhong Su ◽  
Dangjuan Li ◽  
Junqi Xu ◽  
Satyananda Kar ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Applied Electric Field ◽  
Dielectric Thin Films ◽  
Laser Induced Damage

Nanoscale electromechanical phenomena in ferroelectric thin films

2000 ◽  
Vol 655 ◽  
Author(s):  
C. S. Ganpule ◽  
A. L. Roytburd ◽  
V. Nagarajan ◽  
A. Stanishevsky ◽  
J. Melngailis ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Atomic Force Microscope ◽  
Applied Electric Field ◽  
Focused Ion Beam ◽  
Piezoelectric Effect ◽  
Ion Beam ◽  
Surface Displacement ◽  
Ferroelectric Thin Films ◽  
Atomic Force

AbstractFocused ion beam milling was used to fabricate ferroelectric islands in Pb-Zr-Ti-O thin films. The islands ranged in size from 200μm×200μm to 0.3μm×0.3μm. The inverse piezoelectric effect was studied in these islands as a function of their size by tracking the surface displacement of the top electrode of the island (under an applied electric field) using an atomic force microscope (AFM). It was found that there was a substantial increase in the piezoresponse as the size of the island decreased below 100μm×100μm. This increase was attributed to the elastic deformation of the substrate.

Thermal pulse measurements of space charge distributions under an applied electric field in thin films

2013 ◽  
Vol 24 (6) ◽  
pp. 065603 ◽  
Author(s):  
Feihu Zheng ◽  
Chuandong Liu ◽  
Chen Lin ◽  
Zhenlian An ◽  
Qingquan Lei ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Space Charge ◽  
Applied Electric Field ◽  
Thermal Pulse ◽  
Charge Distributions ◽  
Pulse Measurements
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