Role of step edges in oxygen vacancy transport into SrTiO3(001)

2005 ◽  
Vol 87 (5) ◽  
pp. 051903 ◽  
Author(s):  
X. D. Zhu ◽  
Y. Y. Fei ◽  
H. B. Lu ◽  
G. Z. Yang
Keyword(s):  
2018 ◽  
Vol 667 ◽  
pp. 17-24 ◽  
Author(s):  
Thorsten Wagner ◽  
Daniel Roman Fritz ◽  
Zdena Rudolfová ◽  
Peter Zeppenfeld

2007 ◽  
Vol 75 (20) ◽  
Author(s):  
A. Varykhalov ◽  
O. Rader ◽  
V. K. Adamchuk ◽  
W. Gudat ◽  
B. E. Koel ◽  
...  
Keyword(s):  

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.


2021 ◽  
Vol 79 ◽  
pp. 123-132
Author(s):  
Yixuan Lv ◽  
Yijun Zhang ◽  
Le Shi ◽  
Jian-Wen Shi ◽  
Jun Li ◽  
...  

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