Reversible surface functionalization of carbon nanotubes for fabrication of field-effect transistors

2005 ◽  
Vol 87 (4) ◽  
pp. 043110 ◽  
Author(s):  
Zhi-Bin Zhang ◽  
Juan Cardenas ◽  
Eleanor E. B. Campbell ◽  
Shi-Li Zhang
Keyword(s):  
Carbon Nanotubes ◽  
Surface Functionalization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Functionalization Of Carbon Nanotubes

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Large Diameter ◽  
Ozone Exposure ◽  
Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.

Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors

2006 ◽  
Vol 45 (4B) ◽  
pp. 3680-3685 ◽  
Author(s):  
Bae-Horng Chen ◽  
Jeng-Hua Wei ◽  
Po-Yuan Lo ◽  
Zing-Way Pei ◽  
Tien-Sheng Chao ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Novel Method

Enhanced performance of In2O3 nanowire field effect transistors with controllable surface functionalization of Ag nanoparticles

2020 ◽  
Vol 31 (35) ◽  
pp. 355703
Author(s):  
Liming Wu ◽  
Jinxia Xu ◽  
Qiliang Li ◽  
Zhicheng Fan ◽  
Fei Mei ◽  
...  
Keyword(s):  
Surface Functionalization ◽  
Ag Nanoparticles ◽  
Field Effect ◽  
Field Effect Transistors

Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes

Nano Research ◽  
2012 ◽  
Vol 5 (6) ◽  
pp. 388-394 ◽  
Author(s):  
Justin Wu ◽  
Liming Xie ◽  
Guosong Hong ◽  
Hong En Lim ◽  
Boanerges Thendie ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Short Channel

Large-scale assembly of ‘type-switchable’ field effect transistors based on carbon nanotubes and nanoparticles

2010 ◽  
Vol 21 (34) ◽  
pp. 345301 ◽  
Author(s):  
Sung Myung ◽  
Sungjong Woo ◽  
Jiwoon Im ◽  
Hyungwoo Lee ◽  
Yo-Sep Min ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors

Top-of-the-Barrier Ballistic Carbon Nanotubes and Graphene Nanoribbon Field-Effect Transistors Quantum Simulator

2015 ◽  
Vol 7 (12) ◽  
pp. 2576-2582 ◽  
Author(s):  
Huei Chaeng Chin ◽  
Chin Lin Ng ◽  
Cheng Siong Lim ◽  
Michael Loong Peng Tan
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Quantum Simulator
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