Structure and properties of WO3-doped Pb0.97La0.03(Zr0.52Ti0.48)O3 ferroelectric thin films prepared by a sol-gel process

2005 ◽  
Vol 98 (3) ◽  
pp. 034104 ◽  
Author(s):  
Santiranjan Shannigrahi ◽  
Kui Yao
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Structure And Properties ◽  
Sol Gel Process

Enhanced photovoltaic properties of PbTiO3-based ferroelectric thin films prepared by a sol-gel process

2017 ◽  
Vol 43 (16) ◽  
pp. 13063-13068 ◽  
Author(s):  
Haimin Li ◽  
Jianguo Zhu ◽  
Qianbao Wu ◽  
Jia Zhuang ◽  
Hongli Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Photovoltaic Properties ◽  
Sol Gel Process

Structure and properties of sol-gel processed (Pb,La)TiO3 ferroelectric thin films

1994 ◽  
Vol 5 (4) ◽  
pp. 303-310 ◽  
Author(s):  
Liu Meidong ◽  
Wang Peiying ◽  
Li Churong ◽  
Wu Guoan ◽  
Rao Yunhua ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Structure And Properties

Influence of Geometrical Parameters on the Electrical Properties of Ferroelectric Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
S.P. Faure ◽  
P. Gaucher ◽  
J.P. Ganne
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Mean Value ◽  
Ferroelectric Thin Films ◽  
Geometrical Parameters ◽  
Electrical Characteristics ◽  
Electrode Size ◽  
Sol Gel Process

AbstractFerroelectric thin films of PbZr0.5Ti0.5O3 were prepared by sol-gel process. Top electrodes of different sizes were deposited on thin films in order to study their influence on electrical properties. Histograms of the measured electrical characteristics are related to the electrode sizes. By reducing the electrode size, it is possible to improve the electrical properties of the film. Various properties, such as remanent polarization Pr and coercive voltage Vc, were measured statistically in order to show the evolution of their mean value and of their variance with the electrode size.

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

Effects of Annealing Temperature on Structure and Properties of PLBZT Ferroelectric Thin Films Synthesized by Sol-Gel Processing

2012 ◽  
Vol 602-604 ◽  
pp. 1461-1464
Author(s):  
Hua Wang ◽  
Li Liu ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Ferroelectric Thin Films ◽  
Structure And Properties ◽  
Maximum Value ◽  
Processing Effects ◽  
Gel Processing

[Pb0.95(La0.6Bi0.4)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10-9 A/cm2 can be observed in PLBZT thin films when the annealing temperature is 550°C.

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

2013 ◽  
Vol 734-737 ◽  
pp. 2328-2331
Author(s):  
Yu Fei You ◽  
C.H. Xu ◽  
Jing Zhe Wang ◽  
Jun Peng Wang
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Spin Coating ◽  
Room Temperature ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb0.499Sr0.499TiO3 (PST)thin films. The initial films were prepared with spin coating sol solution on silicon wafer and drying at room temperature and then heating coated dry sol film at 400°C for 10min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. The 4 initial films were annealed at 700°C for 2h to obtain PST ceramics films. The morphologies of the surface and cross-section of PST films were observed with a scanning electronic microscope (SEM). The phase structures of PST films were analyzed using X-ray diffraction meter (XRD). Experimental results show that PST film prepared by coating sol on silicon with different thicknesses can be high smooth,uniform and compact film.

Citrate complexing sol–gel process of lead-free (K,Na)NbO3 ferroelectric films

2016 ◽  
Vol 30 (13) ◽  
pp. 1650157 ◽  
Author(s):  
Linlin Yao ◽  
Kongjun Zhu
Keyword(s):  
Thin Films ◽  
Citric Acid ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Raw Material ◽  
Lead Free ◽  
Ferroelectric Films ◽  
Sol Gel Process ◽  
Porous Morphology ◽  
Loop Measurement

The citrate complexing sol–gel process to fabricate lead-free (K,[Formula: see text]Na)NbO3 ferroelectric thin films was studied. Soluble niobium source of niobium–citric acid (Nb–CA) solution was utilized as a raw material to synthesize (K,[Formula: see text]Na)NbO3 thin films, by pyrolyzing at 450–550[Formula: see text]C and annealing at 650[Formula: see text]C. The film pyrolyzed at 450[Formula: see text]C shows poor crystallization with porous morphology, whereas the film pyrolyzed at 550[Formula: see text]C appear to be well-crystallized and denser, and the ferroelectricity was also proved by the [Formula: see text]–[Formula: see text] hysteresis loop measurement.

Enchancement of Mechanical Properties in BaTiO3 Ferroelectric Thin Films

2010 ◽  
Vol 150-151 ◽  
pp. 599-602 ◽  
Author(s):  
Cheng Lu ◽  
Xiang Yun Deng ◽  
Xiao Fen Guan ◽  
Zhong Wen Tan ◽  
Yan Jie Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Elastic Modulus ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Fabrication Method ◽  
Maximum Hardness ◽  
Sol Gel Process

Surface structure and mechanical properties of BaTiO3 thin films prepared by sol-gel process were investigated by XP-2 profiler and nano-indention. The results indicated that the thickness of thin films got thicker with sintering temperature and the thickness-increasing rate differ from different solvent. The hardness and elastic modulus were enhanced due to the presence of residual stress which was compression and probably induced by fabrication method. The maximum hardness is 9.98GPa when the Young’s modulus is 127.41GPa with ethanol as solvent sintered at 1000oC.

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