Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement

2005 ◽  
Author(s):  
R. Schuster
Keyword(s):  
Charge Carrier ◽  
Quantum Wires ◽  
Single Quantum ◽  
Carrier Confinement

Strong charge carrier confinement in purely strain induced GaAs∕InAlAs single quantum wires

2004 ◽  
Vol 85 (17) ◽  
pp. 3672-3674 ◽  
Author(s):  
R. Schuster ◽  
H. Hajak ◽  
M. Reinwald ◽  
W. Wegscheider ◽  
D. Schuh ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wires ◽  
Single Quantum ◽  
Carrier Confinement

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

Cathodoluminescence investigation of lateral carrier confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substrates

1992 ◽  
Vol 267 (1-3) ◽  
pp. 257-262 ◽  
Author(s):  
J. Christen ◽  
E. Kapon ◽  
E. Colas ◽  
D.M. Hwang ◽  
L.M. Schiavone ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Carrier Confinement

Strain-enhanced charge carrier confinement in quantum dots and wires fabricated by cleaved edge overgrowth

2010 ◽  
Author(s):  
J. Ehehalt ◽  
C. Neugirg ◽  
R. Schuster ◽  
D. Schuh ◽  
W. Wegscheider ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Charge Carrier ◽  
Carrier Confinement

Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating

1994 ◽  
Vol 64 (6) ◽  
pp. 695-697 ◽  
Author(s):  
A. Gustafsson ◽  
L. Samuelson ◽  
J.‐O. Malm ◽  
G. Vermeire ◽  
P. Demeester
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Single Quantum

Magnetotransport phenomena in single quantum wires grown on laterally patterned substrates

1996 ◽  
Vol 40 (1-8) ◽  
pp. 323-328 ◽  
Author(s):  
M. Tornow ◽  
D. Weiss ◽  
K.v. Klitzing ◽  
T. Shitara ◽  
A. Kurtenbach ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Patterned Substrates ◽  
Single Quantum

Charge carrier interference in modulated quantum wires

2000 ◽  
Vol 34 (4) ◽  
pp. 462-472 ◽  
Author(s):  
N. T. Bagraev ◽  
W. Gehlhoff ◽  
V. K. Ivanov ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wires

Microphotoluminescence studies of high quality single quantum wires

1998 ◽  
Vol 42 (7-8) ◽  
pp. 1217-1221 ◽  
Author(s):  
V. Voliotis ◽  
J. Bellessa ◽  
R. Grousson ◽  
X.L. Wang ◽  
M. Ogura ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Single Quantum ◽  
High Quality

Laser-action in V-groove-shaped InGaAs-InP single quantum wires

2000 ◽  
Vol 6 (3) ◽  
pp. 522-527 ◽  
Author(s):  
D. Piester ◽  
P. Bonsch ◽  
T. Schrimpf ◽  
H.-H. Wehmann ◽  
A. Schlachetzki
Keyword(s):  
Quantum Wires ◽  
Laser Action ◽  
Single Quantum
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