Photoluminescence excitation spectra of one-dimensional electron systems in an n-type doped quantum wire

2005 ◽  
Author(s):  
Toshiyuki Ihara
Keyword(s):  
Quantum Wire ◽  
Electron Systems ◽  
Photoluminescence Excitation ◽  
Dimensional Electron ◽  
Excitation Spectra ◽  
One Dimensional

Magnetization of GaAs quantum wires with quasi one-dimensional electron systems

2004 ◽  
Vol 22 (1-3) ◽  
pp. 729-732 ◽  
Author(s):  
M.A Wilde ◽  
J.I Springborn ◽  
Ch Heyn ◽  
D Heitmann ◽  
D Grundler
Keyword(s):  
Quantum Wires ◽  
Electron Systems ◽  
Dimensional Electron ◽  
One Dimensional

Experimental determination of spectral densities in quasi-one-dimensional electron systems

1998 ◽  
Vol 249-251 ◽  
pp. 175-179
Author(s):  
B. Kardynal ◽  
C.H.W. Barnes ◽  
E.H. Linfield ◽  
D.A. Ritchie ◽  
J.T. Nicholls ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Electron Systems ◽  
Dimensional Electron ◽  
Spectral Densities ◽  
One Dimensional

scholarly journals Realization of pristine and locally tunable one-dimensional electron systems in carbon nanotubes

2013 ◽  
Vol 8 (8) ◽  
pp. 569-574 ◽  
Author(s):  
J. Waissman ◽  
M. Honig ◽  
S. Pecker ◽  
A. Benyamini ◽  
A. Hamo ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Systems ◽  
Dimensional Electron ◽  
One Dimensional

scholarly journals SPIN – A Schrödinger-Poisson Solver Including Nonparabolic Bands

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 489-493
Author(s):  
H. Kosina ◽  
C. Troger
Keyword(s):  
Dispersion Relation ◽  
Effective Mass ◽  
Schrodinger Equation ◽  
Wave Functions ◽  
Two Dimensional ◽  
Electron Systems ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Poisson Solver ◽  
Two Dimensional Electron Systems

Nonparabolicity effects in two-dimensional electron systems are quantitatively analyzed. A formalism has been developed which allows to incorporate a nonparabolic bulk dispersion relation into the Schrödinger equation. As a consequence of nonparabolicity the wave functions depend on the in-plane momentum. Each subband is parametrized by its energy, effective mass and a subband nonparabolicity coefficient. The formalism is implemented in a one-dimensional Schrödinger-Poisson solver which is applicable both to silicon inversion layers and heterostructures.

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